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(a) SEM image of GaN p-n junction nanorods grown on Si substrate. (b) TEM image of a representative GaN p-n junction nanorod. (c) Selected area diffraction of (b) along zone axis. (d) Higher magnification image of the red-boxed area in (b) showing coalescence of smaller nanorods at the base of the nanorod. (e) Lattice-resolved image taken of the blue boxed area in (b) showing (0001) GaN c-lattice spacing of 0.52 nm.
(a) Dark-field STEM, (b) panchromatic, and (c) 3.54 eV monochromatic CL images of the same nanorod investigated in Figure 1(b) , taken at RT. (d) RT CL spectrum (black) showing a peak at 3.54 eV with 190 meV FWHM and the corresponding Gaussian fit (red). (e) Panchromatic, (f)3.59 eV monochromatic, and (g) 3.35 eV monochromatic CL images of the same nanorod at 93 K. (h) CL spectrum map along the length of the nanorod indicated by the dotted line in (a).
Normalized integrated intensities of the 3.59 eV and 3.35 eV CL luminescence along the length of the nanorod shown in Figure 2(h) . The positions of the nanorod coalescence in the n-GaN section and metallurgical junction are indicated. The squares and circles are experimental data, and the dashed lines are fits based on an exponential decay model.
CL intensity as a function of temperature for a GaN nanorod from 93 K to 185 K. (Experimental data in squares and fitting in dashed line.) Insets show the STEM and corresponding CL images used to extract the data.
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