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(a) Schematic diagram of the two deposited structures. (b) FTIR analyses. (c) Resistive switching behavior comparison between the two devices.
(a) Conduction mechanism analyses of sample A. (b) The conduction mechanisms in LRS are Ohmic conduction followed by Poole-Frenkel emission. (c) The conduction mechanisms in HRS are a short period of Schottky emission followed by Poole-Frenkel emission.
(a) Conduction mechanism analyses of sample B. (b) The proposed model of the conduction mechanism in LRS during the set process. (c) Comparison of the energy band diagrams in LRS between these two structures.
(a) The schematic diagram in LRS, equivalent to two resistances in series. (b) The self-compliance behavior during set process further confirms the existence of the SiO2 barrier layer.
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