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Insertion of a Si layer to reduce operation current for resistive random access memory applications
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10.1063/1.4812304
/content/aip/journal/apl/102/25/10.1063/1.4812304
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/25/10.1063/1.4812304
/content/aip/journal/apl/102/25/10.1063/1.4812304
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/content/aip/journal/apl/102/25/10.1063/1.4812304
2013-06-24
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Insertion of a Si layer to reduce operation current for resistive random access memory applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/25/10.1063/1.4812304
10.1063/1.4812304
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