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Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1−xAs/Al0.24Ga0.76As modulation-doped quantum wells with extremely low x
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10.1063/1.4812357
/content/aip/journal/apl/102/25/10.1063/1.4812357
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/25/10.1063/1.4812357

Figures

Image of FIG. 1.
FIG. 1.

A schematic band structure of the samples used in this study. Note that the Si dopants are placed in narrow GaAs quantum wells 75 nm above and below the principal 30 nm quantum well.

Image of FIG. 2.
FIG. 2.

Plot of RHEED oscillations for Al concentration of x = 0.0036. The large drop in intensity seen at the start of the data collection is characteristic of AlAs oscillations in our machine. The vertical lines represent deposition of one complete monolayer of AlAs.

Image of FIG. 3.
FIG. 3.

The dependence of τ on x(1 − x) measured at T = 0.3 K. The dotted line is a linear fit to the data which yields 24 ns per%Al.

Tables

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Table I.

Sample identifier, quantum well mole fraction x, electron density , mobility μ, and total scattering rate τ for the 10 samples grown and measured at T = 0.3 K.

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/content/aip/journal/apl/102/25/10.1063/1.4812357
2013-06-25
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1−xAs/Al0.24Ga0.76As modulation-doped quantum wells with extremely low x
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/25/10.1063/1.4812357
10.1063/1.4812357
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