Full text loading...
A schematic band structure of the samples used in this study. Note that the Si dopants are placed in narrow GaAs quantum wells 75 nm above and below the principal 30 nm quantum well. 37
Plot of RHEED oscillations for Al concentration of x = 0.0036. The large drop in intensity seen at the start of the data collection is characteristic of AlAs oscillations in our machine. The vertical lines represent deposition of one complete monolayer of AlAs.
The dependence of τ−1 on x(1 − x) measured at T = 0.3 K. The dotted line is a linear fit to the data which yields 24 ns−1 per%Al.
Sample identifier, quantum well mole fraction x, electron density n, mobility μ, and total scattering rate τ−1 for the 10 samples grown and measured at T = 0.3 K.
Article metrics loading...