1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Performance and characteristics of double layer porous silicon oxide resistance random access memory
Rent:
Rent this article for
USD
10.1063/1.4812474
/content/aip/journal/apl/102/25/10.1063/1.4812474
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/25/10.1063/1.4812474
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic view of ICP oxygen plasma process. Nanopores are formed by etching carbon elements in SiO layer.

Image of FIG. 2.
FIG. 2.

(a) Resistive switching characteristics comparison of normal and porous oxide structure RRAM. (b) Distributions of set voltage. Inset is the real picture of device. (c), (d) Distributions of HRS and LRS within 100 cycles of single Zr:SiO layer and porous oxide structure RRAM, respectively.

Image of FIG. 3.
FIG. 3.

(a) and (b) Endurance characteristics of Zr:SiO and Zr:SiO/porous SiO RRAM, respectively. The bottom diagrams are the corresponding device structures and endurance testing pulse.

Image of FIG. 4.
FIG. 4.

Setting time comparison under fast I-V test. Inset is the 3-D schematic structure of device.

Image of FIG. 5.
FIG. 5.

Electric field simulation of HRS and LRS of Zr:SiO/porous SiO RRAM.

Loading

Article metrics loading...

/content/aip/journal/apl/102/25/10.1063/1.4812474
2013-06-28
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Performance and characteristics of double layer porous silicon oxide resistance random access memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/25/10.1063/1.4812474
10.1063/1.4812474
SEARCH_EXPAND_ITEM