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Schematic view of ICP oxygen plasma process. Nanopores are formed by etching carbon elements in SiO2 layer.
(a) Resistive switching characteristics comparison of normal and porous oxide structure RRAM. (b) Distributions of set voltage. Inset is the real picture of device. (c), (d) Distributions of HRS and LRS within 100 cycles of single Zr:SiO2 layer and porous oxide structure RRAM, respectively.
(a) and (b) Endurance characteristics of Zr:SiO2 and Zr:SiO2/porous SiO2 RRAM, respectively. The bottom diagrams are the corresponding device structures and endurance testing pulse.
Setting time comparison under fast I-V test. Inset is the 3-D schematic structure of device.
Electric field simulation of HRS and LRS of Zr:SiOx/porous SiOx RRAM.
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