1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Submicron mapping of strain distributions induced by three-dimensional through-silicon via features
Rent:
Rent this article for
USD
10.1063/1.4812481
/content/aip/journal/apl/102/25/10.1063/1.4812481
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/25/10.1063/1.4812481

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional schematic of TSV structure composed of (a) circular geometry or (b) annular geometry. A 150 nm thick BOX layer and Si (001) substrate lie underneath the 88 nm thick SOI layer. The overlying, blanket SiN capping layer is not included.

Image of FIG. 2.
FIG. 2.

Plot of the depth-averaged strain distribution, ε, measured by x-ray microbeam diffraction and simulated using FEM modeling as a function of distance from the edge of a (a) circular and (b) annular TSV feature containing copper metallization.

Image of FIG. 3.
FIG. 3.

Plot of simulated, depth-averaged radial (ε), tangential (ε), and out-of-plane strain distributions (ε) in the SOI region as a function of distance from the edge of the circular TSV using FEM modeling.

Image of FIG. 4.
FIG. 4.

Comparison of the depth-averaged strain distribution, ε, as a function of distance from the center of an annular TSV feature with and without copper metallization, revealing the extent and magnitude of strain generated by the liner materials.

Tables

Generic image for table
Table I.

Cu in-plane and out-of-plane stress values for 50 m pitch, circular and annular TSV features measured using x-ray diffraction.

Loading

Article metrics loading...

/content/aip/journal/apl/102/25/10.1063/1.4812481
2013-06-28
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Submicron mapping of strain distributions induced by three-dimensional through-silicon via features
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/25/10.1063/1.4812481
10.1063/1.4812481
SEARCH_EXPAND_ITEM