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Schematic diagram of the SiO2/Sb2Te3/SiO2 structure for Si-ion implantation.
Cross-sectional TEM ((a) and (b)) and high-resolution TEM (c) images of the implanted Sb2Te3 with 1 × 1016 Si-ions/cm2. The Pt layer on top of SiO2 has been deposited to protect the sample during the FIB preparation.
(a) Cross-sectional TEM of implanted Sb2Te3 with 1 × 1016 Si-ions/cm2; (b) Si 2p, (c) Sb3d and O1s, and (d) Te 3d spectra of implanted Sb2Te3 with 1 × 1016 Si-ions/cm2 after Ar+-ion etching for 225, 250, 275, and 300 s, respectively.
Temperature dependent sheet resistance of the Sb2Te3 and Si-ion implanted Sb2Te3 films: Si implant dose was 5 × 1015, 1 × 1016, and 2.16 × 1016 Si-ions/cm2 for a, b, and c, respectively.
Kissinger plot for E a calculation of implanted Sb2Te3 with 5 × 1015 (a) and 1 × 1016 (b) Si-ions/cm2, and the insets show the sheet resistance dependence of temperature at different heating rate. Arrhenius fitting plots for E a and data retention of implanted Sb2Te3 with 5 × 1015 (c) and 1 × 1016 (d) Si-ions/cm2, and the insets show isothermal process at different specified temperatures.
Arrhenius fitting plots for E a and data retention of Ge2Sb2Te5.
TEM-energy-dispersive X-ray spectroscopy (EDS) elemental depth profiling of the implanted Sb2Te3 with 1 × 1016 Si-ions/cm2.
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