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Characterization of the thermal properties for Si-implanted Sb2Te3 phase change material
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10.1063/1.4812829
/content/aip/journal/apl/102/25/10.1063/1.4812829
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/25/10.1063/1.4812829

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the SiO/SbTe/SiO structure for Si-ion implantation.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM ((a) and (b)) and high-resolution TEM (c) images of the implanted SbTe with 1 × 10 Si-ions/cm. The Pt layer on top of SiO has been deposited to protect the sample during the FIB preparation.

Image of FIG. 3.
FIG. 3.

(a) Cross-sectional TEM of implanted SbTe with 1 × 10 Si-ions/cm; (b) Si 2, (c) Sb3 and O1, and (d) Te 3 spectra of implanted SbTe with 1 × 10 Si-ions/cm after Ar-ion etching for 225, 250, 275, and 300 s, respectively.

Image of FIG. 4.
FIG. 4.

Temperature dependent sheet resistance of the SbTe and Si-ion implanted SbTe films: Si implant dose was 5 × 10, 1 × 10, and 2.16 × 10 Si-ions/cm for a, b, and c, respectively.

Image of FIG. 5.
FIG. 5.

Kissinger plot for calculation of implanted SbTe with 5 × 10 (a) and 1 × 10 (b) Si-ions/cm, and the insets show the sheet resistance dependence of temperature at different heating rate. Arrhenius fitting plots for and data retention of implanted SbTe with 5 × 10 (c) and 1 × 10 (d) Si-ions/cm, and the insets show isothermal process at different specified temperatures.

Image of FIG. 6.
FIG. 6.

Arrhenius fitting plots for and data retention of GeSbTe.

Tables

Generic image for table
Table I.

TEM-energy-dispersive X-ray spectroscopy (EDS) elemental depth profiling of the implanted SbTe with 1 × 10 Si-ions/cm.

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/content/aip/journal/apl/102/25/10.1063/1.4812829
2013-06-27
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of the thermal properties for Si-implanted Sb2Te3 phase change material
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/25/10.1063/1.4812829
10.1063/1.4812829
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