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Terahertz emission from a GaAs/AlAs coupled multilayer cavity with nonlinear optical susceptibility inversion
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10.1063/1.4813012
/content/aip/journal/apl/102/25/10.1063/1.4813012
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/25/10.1063/1.4813012
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Spatial distribution of simulated for two cavity modes realized in a GaAs/AlAs coupled multilayer cavity. The upper panel shows the refractive index profile.

Image of FIG. 2.
FIG. 2.

Simulated temporal profiles of the DFG signals from coupled cavity structures with and without inversion. The excitation source was assumed to be a 100 fs Gaussian pulse.

Image of FIG. 3.
FIG. 3.

(a),(b) Layer structures of two (113)B epiwafers used for the wafer bonding. (c) Bonding configuration. The substrate of epiwafer #A was completely removed after bonding. Measured optical reflection spectra are shown for each structure in the right-hand panel.

Image of FIG. 4.
FIG. 4.

(a) Measured temporal waveforms of terahertz signals from GaAs/AlAs coupled cavity structures with and without inversion. (b) Power spectra obtained by fast Fourier transforms of (a).

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/content/aip/journal/apl/102/25/10.1063/1.4813012
2013-06-28
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahertz emission from a GaAs/AlAs coupled multilayer cavity with nonlinear optical susceptibility inversion
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/25/10.1063/1.4813012
10.1063/1.4813012
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