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Electrical and chemical characteristics of probe-induced two-dimensional SiOx protrusion layers
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10.1063/1.4776696
/content/aip/journal/apl/102/3/10.1063/1.4776696
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/3/10.1063/1.4776696

Figures

Image of FIG. 1.
FIG. 1.

(a) 2D and (b) 3D AFM images showing a probe-induced three-layer SiO x nanometer-height protrusion on the native SiO2 layer. The three successive SiO x protrusion layers are induced by application of voltages of 6, 8, and 10 V. Right panel of (a) shows a profile graph illustrating the heights of the three SiO x protrusion layers, which are around 0.5, 4, and 6 nm. (c) SPEM images of the three SiO x protrusion layers and the native SiO2 layer.

Image of FIG. 2.
FIG. 2.

XPS spectra of the Si 2p core-levels and the Si oxidation states of the native SiO2 layer and the three SiO x protrusion layers. The XPS spectra are decomposed via Voigt function fitting. The decomposed XPS peaks represent the Si 2p core-levels and the Si oxidation states.

Image of FIG. 3.
FIG. 3.

Linear graphs of (a) the chemical shifts and the (b) O/Si content ratios versus height for the native SiO2 layer and the three SiO x protrusion layers.

Image of FIG. 4.
FIG. 4.

(a) Schematic diagram of the contact-mode AFM operation for acquiring the current-voltage (IV) curves of the 2-nm-thin native SiO2 layer and the three SiO x protrusion layers. (b) The rectifying IV characteristics of the native SiO2 layer and the three SiO x protrusion layers. The inset displays an analogous AC electric circuit for the Pt-coated conductive AFM probe in contact with the native SiO2 layer and the three SiO x protrusion layers.

Tables

Generic image for table
Table I.

The binding energies, intensities, and FWHMs of the decomposed XPS peaks of the Si 2p 3/2 and 2p 1/2 core-levels and the Si4+, Si3+, Si2+, and Si1+ oxidation states for the native SiO2 layer and the 0.5-nm, 4-nm, 6-nm SiO x protrusion layers.

Generic image for table
Table II.

The percentages of the Si4+, Si3+, Si2+, Si1+, and Si0+ oxidation states of the native SiO2 layer and the 0.5-nm, 4-nm, and 6-nm SiO x protrusion layers.

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/content/aip/journal/apl/102/3/10.1063/1.4776696
2013-01-23
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical and chemical characteristics of probe-induced two-dimensional SiOx protrusion layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/3/10.1063/1.4776696
10.1063/1.4776696
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