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Cross-sectional TEM images of MgZnO/MgO MQWs with a well layer thickness of ∼5 nm (sample 2). (a) Large-scale cross-sectional bright-field image of sample 2. The inset shows a nanorod-shaped structural feature. (b) High-resolution TEM image of MQW structure. (c) Magnified HAADF-STEM image. The dark and light regions correspond to the MgO and MgZnO layers, respectively. Inset: line-scan composition profiles of Zn and Mg elements along the nanorod's length. (d) SAED pattern for MgZnO/MgO MQWs along the RS- zone axis.
(a) Normal ω/2θ scan XRD patterns for MgZnO/MgO MQWs and a thick MgZnO film on a MgO buffer layer. (b) and (c) Off-normal XRD φ-scans of the (200) and (111) reflections of MQWs. (d) and (e) The off-normal XRD ω/2θ scans of the RS-MgZnO (200) and (111) reflections. Both y-axes are plotted in logarithmic scale.
Transmittance spectra of all samples, measured at room temperature. Inset shows the linear extrapolation of band gap energies in the plot of (Ahν)2 vs hν.
Room-temperature PL spectra for the MgZnO/MgO MQWs samples 3 and the reference sample. Solid lines show Gaussian fits to the UV and visible emission bands. The fringes superimposed on the emission spectra may be due to thin-film interference.
Experimental and calculated results for structural parameters (a,c, γ, , and ), stress ( and ), stress-induced energy shift (ΔE stress), and band gap shift (ΔE g), for the MgZnO sublayers in MQW nanorods.
Values for anisotropic elastic compliance constants, Young's modulus, and Poisson's ratio.
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