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(a) Experimental I-V curves of a two-terminal single layer graphene device. The inset in (a) shows a schematic of graphene device. Three most representative switching phases: (b) ON-ON, (c) ON-OFF (or OFF-ON), and (d) OFF-OFF.
(a) Current as a function of the channel bias voltage in a logarithmic scale. (b) Resistance as a function of measurement time. (c) A histogram of three representative phases. (d) Resistance versus back gate voltage (Vg) of a device in metallic and insulating phases.
(a) I-V curves in vacuum. (b) A scanning electron microscopy image of graphene channel after observing stochastic transitions. (c) An atomic force microscopy image of graphene channel indicated as a red box in (b). The bottom figure is the line scan of the red line. (d) Simulated switching I-V curves. The inset in (d) shows the resistance as a function of simulation time.
Resistance as a function of measurement time. The inset shows a typical I-V curve in the tunneling regime. The stochastic nonlinear switching behavior has been observed before the tunneling regime.
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