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(a) and (c) HRTEM images of the flat and saw-toothed Sn-doped ZnO nanobelts. The arrow in (a) indicates a planar defect existing along the longitudinal direction of the nanostructure. (b) and (d) Diffractograms taken by the FFT result of the HRTEM images in (a) and (c), respectively. The diffractograms were indexed along the direction of the WZ structure.
(a) and (b) Atomic-resolution HAADF-STEM micrographs taken from the flat and saw-like Sn-doped ZnO nanobelts, respectively; columns of Zn and Sn cations are clearly resolved. (c) Intensity profile (A → B) across the planar defect indicates atomic number contrast intensity ∼Z1.65. (d) Intensity profile (C → D) along the planar defect where spacings of Sn columns are in register with Zn sites along the direction.
(a) BF-STEM image of a flat Sn-doped ZnO nanostructure. (b) Concentration profiles of a Zn and Sn elements across the planar defect obtained by EDS line scanning along the arrow in (a). (c) EELS spectra around 530 eV obtained on the planar defect (Point 1, P1) and from the matrix (Point 2, P2) in (a). Spectrum III was obtained by subtracting the spectrum II (matrix) from spectrum I (planar defect).
Atomic-resolution HAADF (a) and ABF-STEM (b) micrographs taken from the ISL. Oxygen columns are detectable in the ABF-STEM micrograph. The atomic structure was overlapped onto the STEM micrographs. The ABF micrograph indicates that Sn atoms arelocated at symmetric positions (indicated by dotted white lines). (c) Comparison between the experimental and the simulated intensity profiles from cations across the planar defect. (d) Comparison of intensity profiles when the Sn:Zn = 100:0 (G1) and theSn:Zn = 50:50 (G2) at the ISL. (e)HAADF-STEM experimental and simulated micrographs near the ISL (Sn:Zn = 100:0) viewed along the zone axis of a WZ structure. No extra periodicity can be observed in the ISL, in either the or projections.
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