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Tunable bandgap of a single layer graphene doped by the manganese oxide using the electrochemical doping
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10.1063/1.4788928
/content/aip/journal/apl/102/3/10.1063/1.4788928
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/3/10.1063/1.4788928
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of the conductivity (σ − T) for Mn doped graphene films for the different applied voltages, at 0.5 V (a), 1.0 V (b), 1.5 V (c), and 2.0 V (d), respectively. Solid lines indicate the fitting curves for the equation of conductivity.

Image of FIG. 2.
FIG. 2.

Energy gap versus the applied voltages of graphene films after the electrochemical doping.

Image of FIG. 3.
FIG. 3.

Raman spectroscopy of graphene films for different defect generations, with the treatments of plasma for 1 min at 15 W and 1.5 min at 15 W, respectively.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the conductivity (σ − T) for Mn doped graphene films for different defect generations, with the treatments of plasma for 1 min at 15 W (a) and 1.5 min at 15 W (b), respectively.

Image of FIG. 5.
FIG. 5.

XPS Mn 2p spectra (a) and C 1s spectra (b) of Mn doped graphene.

Image of FIG. 6.
FIG. 6.

(a) I-V characteristics of the Mn doped graphene FET at VDS = 0.1. (b) The Ion/Ioff ratio according to the source-drain voltage (VDS) for the Mn doped graphene FET. The Ion/Ioff ratio is taken at Vg = −100 V and 100 V, respectively.

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/content/aip/journal/apl/102/3/10.1063/1.4788928
2013-01-24
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunable bandgap of a single layer graphene doped by the manganese oxide using the electrochemical doping
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/3/10.1063/1.4788928
10.1063/1.4788928
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