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Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures
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10.1063/1.4789391
/content/aip/journal/apl/102/3/10.1063/1.4789391
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/3/10.1063/1.4789391

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD patterns of β-FeSi2 thin film, epitaxially grown on Si(111) substrate, measured in 2θ−θ scan. (b) Pole figure concerning β-220/202 diffraction peak. The inset shows schematic illustration of heterojunction photodiode.

Image of FIG. 2.
FIG. 2.

Dark J−V characteristics of β-FeSi2/Si heterojunction photodiode measured at different temperatures of 300, 250, 200, 150, and 50 K.

Image of FIG. 3.
FIG. 3.

I−V characteristics of β-FeSi2/Si heterojunction photodiode measured in the dark and under illumination with a 6-mW, 1.31 μm laser diode at (a) 300 and (b) 50 K.

Image of FIG. 4.
FIG. 4.

Temperature dependence of R 0 A product and zero-bias current responsivity of β-FeSi2/Si heterojunction photodiode.

Image of FIG. 5.
FIG. 5.

Temperature dependence of detectivity of β-FeSi2/Si heterojunction photodiode. The inset shows plot of NEP and detectivity versus bias voltage of devices measured at 300 K.

Tables

Generic image for table
Table I.

Current responsivities measured at 50 and 300 K for bias voltages of 0 and −5 V.

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/content/aip/journal/apl/102/3/10.1063/1.4789391
2013-01-24
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near-infrared photodetection of β-FeSi2/Si heterojunction photodiodes at low temperatures
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/3/10.1063/1.4789391
10.1063/1.4789391
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