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Profiles of (a) electron concentrations in Ge and (b) impurity concentrations in NiGe/Ge. S, P, or both were introduced. Annealing for (a) electrical activation and (b) Ni germanidation were both performed at 250 °C in N2 for 1 min. The peaks of S and P located at the surface are probably due to the surface contaminations, e.g., H, C, and O, because 32S (31P) has the same mass as 16O2 (1H12C18O).
J-V characteristics of (a) NiGe/nGe and (b) NiGe/pGe diodes into which S, P, or both were introduced. J–V characteristics of NiGe/Ge diodes without S or P (Ref.) are also shown as references. Diodes are the same ones analyzed for profiles in Fig. 1(b) .
J-V characteristics at different temperatures for (a) reference, (b) S-introduced, (c) P-introduced, and (d) S and P co-introduced NiGe/nGe diodes.
Relationship Log(|J|/T 2)–1/T for reference, S-introduced, P-introduced, and S and P co-introduced NiGe/nGe diodes. T were 11.0–413 K. Straight lines indicate calculated ideal Schottky currents. The region where |J|/T 2 ∼<10−10 A/cm2/K2 is the lower limit of measurement.
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