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Modulation of NiGe/Ge Schottky barrier height by S and P co-introduction
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10.1063/1.4789437
/content/aip/journal/apl/102/3/10.1063/1.4789437
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/3/10.1063/1.4789437
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Figures

Image of FIG. 1.
FIG. 1.

Profiles of (a) electron concentrations in Ge and (b) impurity concentrations in NiGe/Ge. S, P, or both were introduced. Annealing for (a) electrical activation and (b) Ni germanidation were both performed at 250 °C in N2 for 1 min. The peaks of S and P located at the surface are probably due to the surface contaminations, e.g., H, C, and O, because 32S (31P) has the same mass as 16O2 (1H12C18O).

Image of FIG. 2.
FIG. 2.

J-V characteristics of (a) NiGe/nGe and (b) NiGe/pGe diodes into which S, P, or both were introduced. J–V characteristics of NiGe/Ge diodes without S or P (Ref.) are also shown as references. Diodes are the same ones analyzed for profiles in Fig. 1(b) .

Image of FIG. 3.
FIG. 3.

J-V characteristics at different temperatures for (a) reference, (b) S-introduced, (c) P-introduced, and (d) S and P co-introduced NiGe/nGe diodes.

Image of FIG. 4.
FIG. 4.

Relationship Log(|J|/T 2)–1/T for reference, S-introduced, P-introduced, and S and P co-introduced NiGe/nGe diodes. T were 11.0–413 K. Straight lines indicate calculated ideal Schottky currents. The region where |J|/T 2 ∼<10−10 A/cm2/K2 is the lower limit of measurement.

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/content/aip/journal/apl/102/3/10.1063/1.4789437
2013-01-25
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modulation of NiGe/Ge Schottky barrier height by S and P co-introduction
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/3/10.1063/1.4789437
10.1063/1.4789437
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