1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
oa
Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon
Rent:
Rent this article for
Access full text Article
/content/aip/journal/apl/102/3/10.1063/1.4789507
1.
1. F. Schäffler, Semicond. Sci. Technol. 12, 1515 (1997), and references cited therein.
http://dx.doi.org/10.1088/0268-1242/12/12/001
2.
2. D. J. Paul, Semicond. Sci. Technol. 19, R75R108 (2004).
http://dx.doi.org/10.1088/0268-1242/19/10/R02
3.
3. O. G. Schmidt and K. Eberl, IEEE Trans. Electron Devices 48, 1175 (2001).
http://dx.doi.org/10.1109/16.925244
4.
4. S. L. Chuang, Physics of Photonic Devices, 2nd ed. (John Wiley & Sons, Inc., Hoboken, NJ, 2009), p. 840.
5.
5. J. R. Sanchez-Perez, C. Boztug, F. Chen, F. F. Sudradjat, D. M. Paskiewicz, R. B. Jacobson, M. G. Lagally, and R. Paiella, Proc. Natl. Acad. Sci. U.S.A. 108, 18893 (2011).
http://dx.doi.org/10.1073/pnas.1107968108
6.
6. M. Ieong, B. Doris, J. Kedzierski, K. Rim, and M. Yang, Science 306, 2057 (2004).
http://dx.doi.org/10.1126/science.1100731
7.
7. S. E. Thompson, M. Armstrong, C. Auth, M. Alavi, M. Buehler, R. Chau, S. Cea, T. Ghani, G. Glass, T. Hoffman, C. H. Jan, C. Kenyon, J. Klaus, K. Kuhn, Z. Y. Ma, B. Mcintyre, K. Mistry, A. Murthy, B. Obradovic, R. Nagisetty, P. Nguyen, S. Sivakumar, R. Shaheed, L. Shiften, B. Tufts, S. Tyagi, M. Bohr, and Y. El-Mansy, IEEE Trans. Electron Devices 51, 1790 (2004).
http://dx.doi.org/10.1109/TED.2004.836648
8.
8. Y. Sun, S. E. Thompson, and T. Nishida, J. Appl. Phys. 101, 104503 (2007).
http://dx.doi.org/10.1063/1.2730561
9.
9. N. Hrauda, J. J. Zhang, J. Stangl, A. Rehman-Khan, G. Bauer, M. Stoffel, O. G. Schmidt, V. Jovanovich, and L. K. Nanver, J. Vac. Sci. Technol. B 27, 912 (2009).
http://dx.doi.org/10.1116/1.3056178
10.
10. J. J. Zhang, N. Hrauda, H. Groiss, A. Rastelli, J. Stangl, F. Schäffler, O. G. Schmidt, and G. Bauer, Appl. Phys. Lett. 96, 193101 (2010).
http://dx.doi.org/10.1063/1.3425776
11.
11. N. Hrauda, J. J. Zhang, E. Wintersberger, T. Etzelstorfer, B. Mandl, J. Stangl, D. Carbone, V. Holy, V. Jovanovic, C. Biasotto, L. K. Nanver, J. Moers, D. Grützmacher, and G. Bauer, Nano Lett. 11, 2875 (2011).
http://dx.doi.org/10.1021/nl2013289
12.
12. J. Gerharz, G. Mussler, J. Moers, G. Rinke, S. Trellenkamp, and D. Grützmacher, in Ulis 2009: 10th International Conference On Ultimate Integration of Silicon (2009), p. 177.
13.
13. V. Jovanović, C. Biasotto, L. K. Nanver, J. Moers, D. Grützmacher, J. Gerharz, G. Mussler, J. van der Cingel, J. J. Zhang, G. Bauer, O. G. Schmidt, and L. Miglio, IEEE Electron Device Lett. 31, 1083 (2010).
http://dx.doi.org/10.1109/LED.2010.2058995
14.
14. G. S. Kar, S. Kiravittaya, U. Denker, B. Y. Nguyen, and O. G. Schmidt, Appl. Phys. Lett. 88, 253108 (2006).
http://dx.doi.org/10.1063/1.2214150
15.
15. J. J. Zhang, M. Stoffel, A. Rastelli, O. G. Schmidt, V. Jovanovic, L. K. Nanver, and G. Bauer, Appl. Phys. Lett. 91, 173115 (2007).
http://dx.doi.org/10.1063/1.2802555
16.
16. E. Sutter, P. Sutter, and J. E. Bernard, Appl. Phys. Lett. 84, 2262 (2004).
http://dx.doi.org/10.1063/1.1669068
17.
17. O. H. Seeck, C. Deiter, K. Pflaum, F. Bertam, A. Beerlink, H. Franz, J. Horbach, H. Schulte-Schrepping, B. M. Murphy, M. Greve, and O. Magnussen, J. Synchrotron Radiat. 19, 30 (2012).
http://dx.doi.org/10.1107/S0909049511047236
18.
18. N. Hrauda, J. J. Zhang, M. J. Süess, E. Wintersberger, V. Holý, J. Stangl, C. Deiter, O. H. Seeck, and G. Bauer, Nanotechnology 23, 465705 (2012).
http://dx.doi.org/10.1088/0957-4484/23/46/465705
19.
19. G. Chen, H. Lichtenberger, G. Bauer, W. Jantsch, and F. Schäffler, Phys. Rev. B 74, 035302 (2006).
http://dx.doi.org/10.1103/PhysRevB.74.035302
20.
20. U. Pietsch, V. Holý, and T. Baumbach, High-Resolution X-ray Scattering from Thin Films and Multilayers, 2nd ed. (Springer-Verlag, New York, 2004), p. 408.
21.
21. M. Schmidbauer, X-ray Diffuse Scattering from Self-Organized Mesoscopic Semiconductor Structures, Springer Tracts in Modern Physics Vol. 199 (Springer, 2004).
22.
22. J. J. Zhang, F. Montalenti, A. Rastelli, N. Hrauda, D. Scopece, H. Groiss, J. Stangl, F. Pezzoli, F. Schäffler, O. G. Schmidt, L. Miglio, and G. Bauer, Phys. Rev. Lett. 105, 166102 (2010).
http://dx.doi.org/10.1103/PhysRevLett.105.166102
23.
23. E. P. Kvam and R. Hull, J. Appl. Phys. 73, 7407 (1993).
http://dx.doi.org/10.1063/1.354033
24.
24. D. Pachinger, H. Groiss, M. Teuchtmann, G. Hesser, and F. Schäffler, Appl. Phys. Lett. 98, 223104 (2011).
http://dx.doi.org/10.1063/1.3595486
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/3/10.1063/1.4789507
Loading
/content/aip/journal/apl/102/3/10.1063/1.4789507
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/102/3/10.1063/1.4789507
2013-01-25
2014-07-10

Abstract

We present tensile and compressive strains realized within the same Si capping layer on an array of SiGe islands grown on pit-patterned (001) Si substrates. The strain distributions are obtained from synchrotron X-ray diffraction studies in combination with three-dimensional finite element calculations and simulations of the diffracted intensities. For barn-shaped islands grown at with average Ge contents of 30%, the Si cap layer is misfit- and threading-dislocation free and exhibits compressive strains as high as 0.8% in positions between the islands and tensile strains of up to 1% on top of the islands.

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/102/3/1.4789507.html;jsessionid=482t0og8qgij1.x-aip-live-02?itemId=/content/aip/journal/apl/102/3/10.1063/1.4789507&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/3/10.1063/1.4789507
10.1063/1.4789507
SEARCH_EXPAND_ITEM