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1. F. Schäffler, Semicond. Sci. Technol. 12, 1515 (1997), and references cited therein.
2. D. J. Paul, Semicond. Sci. Technol. 19, R75R108 (2004).
3. O. G. Schmidt and K. Eberl, IEEE Trans. Electron Devices 48, 1175 (2001).
4. S. L. Chuang, Physics of Photonic Devices, 2nd ed. (John Wiley & Sons, Inc., Hoboken, NJ, 2009), p. 840.
5. J. R. Sanchez-Perez, C. Boztug, F. Chen, F. F. Sudradjat, D. M. Paskiewicz, R. B. Jacobson, M. G. Lagally, and R. Paiella, Proc. Natl. Acad. Sci. U.S.A. 108, 18893 (2011).
6. M. Ieong, B. Doris, J. Kedzierski, K. Rim, and M. Yang, Science 306, 2057 (2004).
7. S. E. Thompson, M. Armstrong, C. Auth, M. Alavi, M. Buehler, R. Chau, S. Cea, T. Ghani, G. Glass, T. Hoffman, C. H. Jan, C. Kenyon, J. Klaus, K. Kuhn, Z. Y. Ma, B. Mcintyre, K. Mistry, A. Murthy, B. Obradovic, R. Nagisetty, P. Nguyen, S. Sivakumar, R. Shaheed, L. Shiften, B. Tufts, S. Tyagi, M. Bohr, and Y. El-Mansy, IEEE Trans. Electron Devices 51, 1790 (2004).
8. Y. Sun, S. E. Thompson, and T. Nishida, J. Appl. Phys. 101, 104503 (2007).
9. N. Hrauda, J. J. Zhang, J. Stangl, A. Rehman-Khan, G. Bauer, M. Stoffel, O. G. Schmidt, V. Jovanovich, and L. K. Nanver, J. Vac. Sci. Technol. B 27, 912 (2009).
10. J. J. Zhang, N. Hrauda, H. Groiss, A. Rastelli, J. Stangl, F. Schäffler, O. G. Schmidt, and G. Bauer, Appl. Phys. Lett. 96, 193101 (2010).
11. N. Hrauda, J. J. Zhang, E. Wintersberger, T. Etzelstorfer, B. Mandl, J. Stangl, D. Carbone, V. Holy, V. Jovanovic, C. Biasotto, L. K. Nanver, J. Moers, D. Grützmacher, and G. Bauer, Nano Lett. 11, 2875 (2011).
12. J. Gerharz, G. Mussler, J. Moers, G. Rinke, S. Trellenkamp, and D. Grützmacher, in Ulis 2009: 10th International Conference On Ultimate Integration of Silicon (2009), p. 177.
13. V. Jovanović, C. Biasotto, L. K. Nanver, J. Moers, D. Grützmacher, J. Gerharz, G. Mussler, J. van der Cingel, J. J. Zhang, G. Bauer, O. G. Schmidt, and L. Miglio, IEEE Electron Device Lett. 31, 1083 (2010).
14. G. S. Kar, S. Kiravittaya, U. Denker, B. Y. Nguyen, and O. G. Schmidt, Appl. Phys. Lett. 88, 253108 (2006).
15. J. J. Zhang, M. Stoffel, A. Rastelli, O. G. Schmidt, V. Jovanovic, L. K. Nanver, and G. Bauer, Appl. Phys. Lett. 91, 173115 (2007).
16. E. Sutter, P. Sutter, and J. E. Bernard, Appl. Phys. Lett. 84, 2262 (2004).
17. O. H. Seeck, C. Deiter, K. Pflaum, F. Bertam, A. Beerlink, H. Franz, J. Horbach, H. Schulte-Schrepping, B. M. Murphy, M. Greve, and O. Magnussen, J. Synchrotron Radiat. 19, 30 (2012).
18. N. Hrauda, J. J. Zhang, M. J. Süess, E. Wintersberger, V. Holý, J. Stangl, C. Deiter, O. H. Seeck, and G. Bauer, Nanotechnology 23, 465705 (2012).
19. G. Chen, H. Lichtenberger, G. Bauer, W. Jantsch, and F. Schäffler, Phys. Rev. B 74, 035302 (2006).
20. U. Pietsch, V. Holý, and T. Baumbach, High-Resolution X-ray Scattering from Thin Films and Multilayers, 2nd ed. (Springer-Verlag, New York, 2004), p. 408.
21. M. Schmidbauer, X-ray Diffuse Scattering from Self-Organized Mesoscopic Semiconductor Structures, Springer Tracts in Modern Physics Vol. 199 (Springer, 2004).
22. J. J. Zhang, F. Montalenti, A. Rastelli, N. Hrauda, D. Scopece, H. Groiss, J. Stangl, F. Pezzoli, F. Schäffler, O. G. Schmidt, L. Miglio, and G. Bauer, Phys. Rev. Lett. 105, 166102 (2010).
23. E. P. Kvam and R. Hull, J. Appl. Phys. 73, 7407 (1993).
24. D. Pachinger, H. Groiss, M. Teuchtmann, G. Hesser, and F. Schäffler, Appl. Phys. Lett. 98, 223104 (2011).

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We present tensile and compressive strains realized within the same Si capping layer on an array of SiGe islands grown on pit-patterned (001) Si substrates. The strain distributions are obtained from synchrotron X-ray diffraction studies in combination with three-dimensional finite element calculations and simulations of the diffracted intensities. For barn-shaped islands grown at with average Ge contents of 30%, the Si cap layer is misfit- and threading-dislocation free and exhibits compressive strains as high as 0.8% in positions between the islands and tensile strains of up to 1% on top of the islands.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd