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InAlAs solar cell on a GaAs substrate employing a graded InxGa1−xAs–InP metamorphic buffer layer
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10.1063/1.4789521
/content/aip/journal/apl/102/3/10.1063/1.4789521
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/3/10.1063/1.4789521

Figures

Image of FIG. 1.
FIG. 1.

Overview of the metamorphic buffer layer growth profile. The homoepitaxial buffer GaAs layer is followed by alloys of a continuous convex compositional gradient of the In content from x = 0% to 53%. The grading comprises of three sections: first 400 nm along a parabolic curve, then linearly, with the slope of the curve reduced for the final 190 nm. The structure is capped with an InP layer, grown under our best established growth conditions as in Ref. 10 .

Image of FIG. 2.
FIG. 2.

Schematic cross section of the InAlAs solar cell grown on the metamorphic buffer on a GaAs substrate.

Image of FIG. 3.
FIG. 3.

Cross-sectional bright field TEM image of the MBL of the solar cell structure. (A1) GaAs substrate; (A2) 400 nm InxGa1−xAs parabolic grading from 1 to 23% indium; (A3) and (A4) 690 nm InxGa1−xAs linear grading 23% to 53%; (A5) 600 nm InP capping layer.

Image of FIG. 4.
FIG. 4.

2-axis X-ray diffractogram of the InAlAs solar cell structure grown on the MBL substrate illustrating diffraction from the GaAs substrate, the metamorphic buffer layers (MBL), and the InAlAs/InP solar cell structure.

Image of FIG. 5.
FIG. 5.

Current density vs voltage characteristics as a function of temperature for InAlAs diodes on (a) InP substrate and (b) MBL/GaAs substrates. The inset to (b) plots the data on a linear scale around V = 0 V.

Image of FIG. 6.
FIG. 6.

Measured current density–voltage characteristics of the InAlAs devices on InP and GaAs substrates under 1-Sun illumination. Projected performance for large area solar cells is given for both substrate types.

Image of FIG. 7.
FIG. 7.

External quantum efficiency as measured for both the InAlAs solar cells grown on the GaAs substrate (diamonds) and mesa diodes on the InP substrate (circles). The simulated responses are given as a straight (GaAs) and dashed line (InP).

Tables

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Table I.

Projected AM1.5G photovoltaic performance for In0.52Al0.48As solar cells on InP and GaAs substrates.

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/content/aip/journal/apl/102/3/10.1063/1.4789521
2013-01-25
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InAlAs solar cell on a GaAs substrate employing a graded InxGa1−xAs–InP metamorphic buffer layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/3/10.1063/1.4789521
10.1063/1.4789521
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