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A schematic cross-section view of the slow-light Bragg reflector waveguide modulator.
Fabrication process: (a) resist patterning by lithography; (b) dry-etching to form the waveguide structure; (c) resist patterning by lithography; (d) dry-etching to form the coupling and out-coupling regions; (e) polymer patterning by lithography; (f) p- and n-type electrodes deposition and lift-off; (g) device completion after high-reflectivity gold mirror deposition; (h) lensed-fiber coupling.
(a) Top-view photos of the fabricated devices: 20 μm long modulator (left), and 50 μm long modulator (right); (b) Measured near-field patterns at different bias voltages.
Measured wavelength dependence and calculation of group index for TE-polarized input.
Intensity versus bias voltage of a 50 μm device for different input wavelengths.
Intensity versus bias voltage for devices with different lengths at the wavelength of 965 nm.
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