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(a) Schematic band diagram of type-II InAs/GaSb heterostructure. (b) Schematic energy diagram in the inverted regime. (a) and (b) are adapted from Ref. 8 . (c) Optical micrograph of a type-II InAs/GaSb field-effect transistor. The central rectangular is the front gate. The scale bar is 10 μm. (d) Rxx (black) and Rxy (red) as a function of the front gate voltage Vg at B = 0 T. The sample temperature is ∼25 mK.
(a) Zero magnetic field conductance Gxx near the CNP. The conductance minimum is close to the value of 4e2/h. (b) Semi-log plot for the temperature dependence of the conductance minimum. The line is a linear fit.
(a) σxx and σxy versus Vg at B = 5 T. The sample temperature is ∼30 mK. The σxx trace is amplified by a factor of 10 for clarity. Arrows mark the integer quantum Hall states in both electron and hole regimes. The vertical dashed line marks the gate voltage, where σxy is almost zero and σxx displays a local minimum. (b) Electron (n) and hole density (p) as a function of Vg. CNP is marked. Red lines are linear fits. (c) Transconductance as a function of gate voltage.
(a) ρxx (black trace) and ρxy (red trace) versus gate voltage at B = 20 T. (b) σxx (black) and σxx (red) versus gate voltage. Arrows mark the positions of the well developed quantum Hall states at νe = 1, 2, and 3 in the electron regime and νh = −1, −2 in the hole regime.
σxx versus σxy at B = 20 T (blue dots), 25 T (black squares), and 30 T (red diamonds). Gray circles are defined by (σxx − N)2 + σxy 2 = N2, with N = 1, 2, 3, and 4.
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