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(a) Structure of a metallic cavity nanolaser with circular cross section. (b) Scanning electron microscope image of an InP/InGaAs/InP nano-pillar coated with SiN layer on its sidewall. We etched away the SiN on top of the pillar and deposited Ti/Pt/Au thus forming the top n contact. Scale bar is 100 nm.
(a) Resonance wavelengths of HE11, TM01, and TE01 modes in a metallic cavity nanolaser as a function of semiconductor pillar radius. Thickness of SiN layer is 30 nm for all the curves except the one with unfilled squares, for which SiN thickness is 120 nm. Shaded gray region indicates roughly the gain bandwidth of InGaAs material. (b) |E|2 field of TE01 mode in Z-r plane. Cavity boundary is marked by white dashed rectangle. (c) Azimuthal component of the electric field of TE01 mode beneath the cavity bottom aperture at the vertical location in r-φ plane, indicated by the white long dashed line in (b).
(a) CW lasing characteristics from a device with total cavity volume of 0.146 λ3 (λ = 1416 nm). L-I curve shows a threshold current at 80 μA. Inset is the lasing spectrum at 196 μA. (b) Linear dependence of resonance wavelength on diameter from 1.37 μm to 1.53 μm, where the slope is 2.7. (c) Laser output images taken by a NIR camera behind a linear polarizer in four different orientations, as indicated by the white arrow. The dark line splitting the image along the polarizer direction confirms the azimuthal polarization of the laser output.
(a) Schematic of metallic cavity nanolaser with horn-shaped antenna waveguide. (b) Far field radiation pattern (|E|) of the nanolaser. Red dashed curve corresponds to device with a horn antenna, showing both narrower far-field lobes and smaller angle separation of two lobes than straight sidewall device (black solid line). The angle in this plot is with respect to the cavity aperture plane and 90° is the direction normal to the aperture plane.
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