Full text loading...
(a) Si2p XPS spectra of SiO0.73 films fitted by five silicon valence states. (b) EPR signal of SiO0.73 films.
(a) Schematic diagram of Pt/SiO0.73/Pt structures. (b) Typical switching characteristics of Pt/SiO0.73/Pt device with a circular electrode 90 μm in diameter. (c) Linear I-V characteristics containing 30 switching cycles. (d) Cycling endurance during sweeping operation in 100 switching cycles.
(a) Schematic of Si–O bonds breakage under high electric field. (b) Schematic of discontinuous and continuous (mini-band) DBs states in the middle of silicon oxide band gap. (c) Schematic of Si-DBs percolation model (c-1) Initial state. (c-2) Formation of percolation path during forming process. (c-3) Partial re-oxidation of dangling bonds during reset process.
Resistance temperature dependence in the HRS and LRS from 150 K to 350 K. The inset shows a T−1/4 dependence indicating the hopping conduction process in the HRS.
Optical microscope pictures of surface morphology of top electrode. (a) Initial. (b) Forming at 1 mA CC. (c) Forming at 10 mA CC.
Resistive switching behaviors of Pt/SiO0.73/Pt device operating in atmospheric, vacuum, and oxygen gas environment, respectively.
Article metrics loading...