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Resistive switching mechanism in silicon highly rich SiOx (x < 0.75) films based on silicon dangling bonds percolation model
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10.1063/1.4776695
/content/aip/journal/apl/102/4/10.1063/1.4776695
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4776695
/content/aip/journal/apl/102/4/10.1063/1.4776695
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/content/aip/journal/apl/102/4/10.1063/1.4776695
2013-01-29
2014-08-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistive switching mechanism in silicon highly rich SiOx (x < 0.75) films based on silicon dangling bonds percolation model
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4776695
10.1063/1.4776695
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