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Resistive switching mechanism in silicon highly rich SiOx (x < 0.75) films based on silicon dangling bonds percolation model
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10.1063/1.4776695
/content/aip/journal/apl/102/4/10.1063/1.4776695
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4776695
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Si2p XPS spectra of SiO0.73 films fitted by five silicon valence states. (b) EPR signal of SiO0.73 films.

Image of FIG. 2.
FIG. 2.

(a) Schematic diagram of Pt/SiO0.73/Pt structures. (b) Typical switching characteristics of Pt/SiO0.73/Pt device with a circular electrode 90 μm in diameter. (c) Linear I-V characteristics containing 30 switching cycles. (d) Cycling endurance during sweeping operation in 100 switching cycles.

Image of FIG. 3.
FIG. 3.

(a) Schematic of Si–O bonds breakage under high electric field. (b) Schematic of discontinuous and continuous (mini-band) DBs states in the middle of silicon oxide band gap. (c) Schematic of Si-DBs percolation model (c-1) Initial state. (c-2) Formation of percolation path during forming process. (c-3) Partial re-oxidation of dangling bonds during reset process.

Image of FIG. 4.
FIG. 4.

Resistance temperature dependence in the HRS and LRS from 150 K to 350 K. The inset shows a T−1/4 dependence indicating the hopping conduction process in the HRS.

Image of FIG. 5.
FIG. 5.

Optical microscope pictures of surface morphology of top electrode. (a) Initial. (b) Forming at 1 mA CC. (c) Forming at 10 mA CC.

Image of FIG. 6.
FIG. 6.

Resistive switching behaviors of Pt/SiO0.73/Pt device operating in atmospheric, vacuum, and oxygen gas environment, respectively.

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/content/aip/journal/apl/102/4/10.1063/1.4776695
2013-01-29
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistive switching mechanism in silicon highly rich SiOx (x < 0.75) films based on silicon dangling bonds percolation model
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4776695
10.1063/1.4776695
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