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High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
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/content/aip/journal/apl/102/4/10.1063/1.4789365
2013-01-29
2014-09-20

Abstract

We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30–60 cm2/Vs, relatively independent of thickness (15–90 nm), and most devices exhibit unipolar n-type behavior. In contrast, multilayer MoS2 on PMMA shows mobility increasing with thickness, up to 470 cm2/Vs (electrons) and 480 cm2/Vs (holes) at thickness ∼50 nm. The dependence of the mobility on thickness points to a long-range dielectric effect of the bulk MoS2 in increasing mobility.

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4789365
10.1063/1.4789365
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