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Volmer-Weber growth of AlSb on Si(111)
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10.1063/1.4789536
/content/aip/journal/apl/102/4/10.1063/1.4789536
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4789536
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Figures

Image of FIG. 1.
FIG. 1.

XRD in-plane intensity profiles taken during the growth of AlSb on Si(111) at . The red line marks the nominal bulk position of the AlSb crystal truncation rod. Feature F1 appears in diffuse scattering near the AlSb {111} reflections perpendicular to the scattering plane. Contribution F2 is an AlSb{200} reflection.

Image of FIG. 2.
FIG. 2.

In-plane reciprocal space map of AlSb/Si(111) obtained after a nominal AlSb thickness of 52 ML at . The diffraction pattern is measured in situ at room temperature directly after growth. Reflections labeled in round brackets () are due to AlSb islands with (111) surface orientation, and reflections in curly brackets {} are due to AlSb islands with {110} surface orientation.

Image of FIG. 3.
FIG. 3.

(a) and (b) RHEED pattern along the high in-plane directions of the AlSb/Si(111) surface grown at and (c) XRD symmetrical (00L) CTR. The rod contains contributions from differently oriented AlSb domains.

Image of FIG. 4.
FIG. 4.

Atomic force micrograph of AlSb/Si(111) after the deposition of nominally 52 ML at . The deposited AlSb forms hexagonal and triangular islands with similar height.

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/content/aip/journal/apl/102/4/10.1063/1.4789536
2013-01-28
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Volmer-Weber growth of AlSb on Si(111)
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4789536
10.1063/1.4789536
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