Full text loading...
SEM images of (a) top-view of the gap region and cross-sectional view of ZnO nanowires with different lengths of (b) 0.7, (c) 1.2, and (d)2.2 μm. Scale bars for (b)–(d) parts are the same. Insets show SEM images of top and cross-sectional view of ZnO nanowires grown on a single Ag nanowire, respectively.
(a) Transmittance spectra of the ZnO/Ag photodetectors. (b) The photograph of transparent ZnO/Ag photodetectors fabricated on glass substrates that are 2.54 cm by 2.54 cm in size. (c) XRD pattern of the ZnO and Ag nanowires. (d) PL spectra of ZnO nanowires at room temperature.
(a) ZnO/Ag nanowire UV photodetector device architecture. (b) Photoresponsivity of ZnO/Ag nanowire based photodetectors under a bias of 2 V. (c) Schematic of the photoresponse process.
(a) I-V characteristics of a fabricated detector at dark and under illumination. Effect of (b) annealing and (c) ZnO nanowire length on the photoresponse characteristics of the detector. (d) Response and recovery characteristics under a bias of 2 V.
Article metrics loading...