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The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers
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10.1063/1.4789859
/content/aip/journal/apl/102/4/10.1063/1.4789859
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4789859
/content/aip/journal/apl/102/4/10.1063/1.4789859
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/content/aip/journal/apl/102/4/10.1063/1.4789859
2013-01-28
2014-07-28
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Scitation: The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4789859
10.1063/1.4789859
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