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The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers
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10.1063/1.4789859
/content/aip/journal/apl/102/4/10.1063/1.4789859
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4789859
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

ln[Ith] and ln[ηd] as a function of temperature.

Image of FIG. 2.
FIG. 2.

Normalized (at T = 60 K) temperature dependence of Jth (full squares and circles). Temperature dependence of Jrad (open squares and circles).

Image of FIG. 3.
FIG. 3.

Measured pressure dependence of threshold current and ideal Jrad at RT.

Image of FIG. 4.
FIG. 4.

Measured pressure dependence of threshold current and ideal Jrad at 120 K.

Image of FIG. 5.
FIG. 5.

Band alignment at GaAs0.7Sb0.3/GaAs interface. With increasing pressure, ΔEc increases and forms a type-I band alignment at the GaAs0.7Sb0.3/GaAs interface (inset).

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/content/aip/journal/apl/102/4/10.1063/1.4789859
2013-01-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4789859
10.1063/1.4789859
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