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Schematic diagram of fabricated AlGaN/GaN HEMTs with triple-cap-layer.
(a) The band diagram and (b) 2DEG sheet density as a function of the thickness of the total barrier for triple-cap-layer/AlGaN/GaN in comparison with those for GaN/AlGaN/AlN/GaN heterostructure.
DC transfer characteristics of E-mode and D-mode AlGaN/GaN HEMTs measured at drain bias of 10 V.
Threshold voltage (V th) histograms of the E/D-mode AlGaN/GaN HEMTs with triple-cap-layer.
Microphotographs of a AlGaN/GaN inverter and a 17-stage ring oscillator.
Frequency spectrum of AlGaN/GaN HEMTs ring oscillator at V DD = 1 V.
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