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Monolithic integrated enhancement/depletion-mode AlGaN/GaN high electron mobility transistors with cap layer engineering
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10.1063/1.4789868
/content/aip/journal/apl/102/4/10.1063/1.4789868
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4789868
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of fabricated AlGaN/GaN HEMTs with triple-cap-layer.

Image of FIG. 2.
FIG. 2.

(a) The band diagram and (b) 2DEG sheet density as a function of the thickness of the total barrier for triple-cap-layer/AlGaN/GaN in comparison with those for GaN/AlGaN/AlN/GaN heterostructure.

Image of FIG. 3.
FIG. 3.

DC transfer characteristics of E-mode and D-mode AlGaN/GaN HEMTs measured at drain bias of 10 V.

Image of FIG. 4.
FIG. 4.

Threshold voltage (V th) histograms of the E/D-mode AlGaN/GaN HEMTs with triple-cap-layer.

Image of FIG. 5.
FIG. 5.

Microphotographs of a AlGaN/GaN inverter and a 17-stage ring oscillator.

Image of FIG. 6.
FIG. 6.

Frequency spectrum of AlGaN/GaN HEMTs ring oscillator at V DD = 1 V.

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/content/aip/journal/apl/102/4/10.1063/1.4789868
2013-01-30
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Monolithic integrated enhancement/depletion-mode AlGaN/GaN high electron mobility transistors with cap layer engineering
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4789868
10.1063/1.4789868
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