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Low attenuation of GHz Rayleigh-like surface acoustic waves in ZnO/GaAs systems immersed in liquid helium
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10.1063/1.4789973
/content/aip/journal/apl/102/4/10.1063/1.4789973
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4789973
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transmission and reflection resonances of the (a) Rayleigh (R) mode in GaAs, (b) Rayleigh and (c) first Sezawa (S1) modes in ZnO/GaAs (film thickness H = 1.2 μm), and (d) second Sezawa (S2) mode in ZnO/GaAs (H = 2.5 μm) at 4.2 K, above and below the liquid helium level.

Image of FIG. 2.
FIG. 2.

Dependence of the attenuation coefficient on frequency for the Rayleigh (R), first (S1), and second (S2) Sezawa modes in the ZnO/GaAs system immersed in liquid helium. The symbols represent the experimental data, whereas the solid and dashed lines correspond, respectively, to the values calculated using Eq. (1) with and without the correction function P λ / P total (kH) discussed in the text. The behaviour of the distinct modes supported by the ZnO/GaAs system is compared to that of the R mode in quartz, YZ-cut LiNbO3, and 128° rotated YX-cut LiNbO3 systems immersed in liquid helium (extrapolated from the low frequency data in Refs. 19–21 , respectively).

Image of FIG. 3.
FIG. 3.

Dependence of the depth profile of the relative magnitude of the acoustic Poynting vector of the (a) Rayleigh (R), (b) first Sezawa (S1), and (c) second Sezawa (S2) modes on kH in the ZnO/GaAs structure for propagation along the [110] direction of the underlying GaAs(001) substrate. The cross on each curve indicates the position of the ZnO/GaAs interface.

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/content/aip/journal/apl/102/4/10.1063/1.4789973
2013-01-31
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low attenuation of GHz Rayleigh-like surface acoustic waves in ZnO/GaAs systems immersed in liquid helium
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4789973
10.1063/1.4789973
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