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Axial strain in GaAs/InAs core-shell nanowires
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View: Figures


Image of FIG. 1.
FIG. 1.

SEM images of the inspected NWs. 1.2 μm long GaAs NW cores (a) are covered by an InAs shell of 12 nm (b), 20 nm (c), and 35 nm (d), respectively. Together with the growth of the InAs shell, parasitic InAs growth occurs in between the initial NWs. (All images have the same scale.)

Image of FIG. 2.
FIG. 2.

X-ray reciprocal space maps around the GaAs (1 1 1) ((a)-(d)) and InAs (1 1 1) ((f)-(h)) reflections of all investigated samples. With increasing shell thickness, the diffraction signal of the GaAs core (co) is displaced from the substrate (s), which is used as reference. Simultaneously, the shell (sh) shows a gradual relaxation and InAs crystallites (cr) grow. (e) shows a sketch of the diffraction geometry. (Logarithmic color-scale, from blue to red.)

Image of FIG. 3.
FIG. 3.

Relative change of the core (red spheres) and shell (blue squares) lattice parameters along the growth direction as function of the shell thickness. The error bars measure the observed spread from the FWHM in Fig. 2 . The green triangles represent the TEM results for the shell. The open symbols show results of the finite element simulation.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Axial strain in GaAs/InAs core-shell nanowires