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Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory
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/content/aip/journal/apl/102/4/10.1063/1.4790277
2013-02-01
2014-11-29

Abstract

This report compares Mo-doped and undoped SiO2 thin films of a similar thickness as well as MoOx. The Mo-doped SiO2 film exhibited switching behavior after the forming process, unlike the undoped SiO2 film. Through material analyses, a self-assembled layer is observed in the Mo-doped SiO2 film. Due to the formation of this layer, the thickness required to be broken down is effectively reduced. Subsequently, the occurrence of the switching behavior in the thinner SiO2 film further confirmed the supposition. A comparison of the two switching behaviors shows that SiO2 dominates the switching characteristic of the Mo-doped SiO2.

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Scitation: Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/4/10.1063/1.4790277
10.1063/1.4790277
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