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(a) FE-SEM image of SnO2-NW. (b) PMMA passivated SnO2 NW-FET structure with a back-gate configuration.
(a) Comparison capacitance values between the C1D and simulated Cgc (Vgs ) (open rectangular) respect to back-gate bias. (b) Ids (Vgs ) (open circle) and gm (Vgs ) (line) of SnO2 NW-FET at Vds = 0.25 V. Simulated Ids (Vgs ) (dotted circle) is added for comparison. (c) YFM(Vgs ) curve with linear fitting line. (d) Comparison of various mobility (μ0 , μfe , μeff ) before and after Rsd correction.
(a) Ids normalized LFN for various Vgs regimes. (b) Relative contribution to total resistance of series resistance (Rsd /Rtot ) and of the channel resistance (Rch /Rtot ) with respect to Ids . At Ids ≈ 10 nA, Rsd /Rtot = Rch /Rtot . (c)Variation of SId /Ids 2 (circle symbols). Solid line: CNF model. Dotted line: CNF + Rsd model.
Simplified cross-section view of the effective Vgs contour in PMMA passivated SnO2 NW-FET with back-gate configuration (left) and its magnified view in SnO2-NW region (right) at high Vgs .
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