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Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors
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10.1063/1.4788708
/content/aip/journal/apl/102/5/10.1063/1.4788708
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4788708
/content/aip/journal/apl/102/5/10.1063/1.4788708
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/content/aip/journal/apl/102/5/10.1063/1.4788708
2013-02-06
2014-12-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4788708
10.1063/1.4788708
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