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Near-field radiative heat transfer between doped silicon nanowire arrays
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10.1063/1.4790143
/content/aip/journal/apl/102/5/10.1063/1.4790143
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4790143
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of near-field radiation between two 1020 cm−3 n-type doped SiNW arrays at temperature T 1 = 400 K and T 2 = 300 K separated by a vacuum gap of width d.

Image of FIG. 2.
FIG. 2.

Total heat flux between the SiNW arrays as a function of vacuum gap for different filling fractions. The heat flux is normalized with respect to that between two Si plates at the same doping level. The heat flux between SiC nanowires normalized with respect to bulk SiC is also plotted for f = 0.5.

Image of FIG. 3.
FIG. 3.

Spectral heat flux between the SiNW arrays for different filling fractions at a vacuum gap d = 100 nm.

Image of FIG. 4.
FIG. 4.

Contour plot of at d = 100 nm with respect to and ω for (a) f = 0.9 and (b) f = 0.75. The dashed curves represent the two branches of dispersion curves of coupled surface plasmon polaritons inside the vacuum gap.

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/content/aip/journal/apl/102/5/10.1063/1.4790143
2013-02-04
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near-field radiative heat transfer between doped silicon nanowire arrays
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4790143
10.1063/1.4790143
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