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(a) Sketch of the material stack used in this work to implement the GaAs nanostructured layers on Si substrates. (b) AFM image of a droplet epitaxy QD.
(a) Spatially and spectrally resolved PL maps, denoting the presence of multiplet PL band. Brighter areas indicate more intense emission. (b) Power dependence analysis of the PL spectra where two main PL lines of the multiplet band are labelled X and XX.
PL intensity of the X (black squares) and XX (red circles) recombination intensity as a function of the excitation power for four different QDs. The data are compared with the Poissonian fits and the fitting parameters (defined in the text) are reported.
Time resolved PL spectra at the emission energy of the X (black line) and the XX (red line) emission for four different excitation powers. At high excitation power, the X and XX emissions overlap to a broad MX band leading to a fast decay emission signal.
High resolution spectra of the X and XX line. The XX line turns out to be a doublet. In the inset, the dependence of the emission energy of the X line as a function of the polarization angle is reported.
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