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Homogeneous and stable p-type doping of graphene by MeV electron beam-stimulated hybridization with ZnO thin films
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10.1063/1.4790161
/content/aip/journal/apl/102/5/10.1063/1.4790161
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4790161
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Figures

Image of FIG. 1.
FIG. 1.

The Zn 2p, C 1s, and O 1s core level spectra of (a), (b), and (c) pristine graphene and zinc acetate dihydrate-coated graphene (d), (e), and (f) before and (g), (h), and (i) after MEBI.

Image of FIG. 2.
FIG. 2.

(a) Optical microscopy image, (b) G-band position map, (c) 2D-band position map, and (d) I2 D /I G map for pristine graphene. (e)-(h) The same as (a)-(d), but for ZnO/graphene formed by MEBI.

Image of FIG. 3.
FIG. 3.

Schematic illustrations of the device structure, including the bottom-gate configuration, 100 nm-thick SiO2 gate dielectric, and ITO source/drain contacts for (a) graphene FET and (b) ZnO/graphene FET. Output and transfer (V DS  = 1 V) characteristics of (c),(e) graphene FET and (d),(f) ZnO/graphene FET at room temperature. Optical microscopy images of (g) graphene FET and (i) ZnO/graphene FET with ITO electrodes. The channel width is 3 μm. Intensity maps of the 2D-band (∼2700 cm−1) of (h) graphene FET and (j) ZnO/graphene FET. The spatial distribution of the sheet resistance for (k) pristine graphene, (l) ZnO/graphene formed by MEBI, and (m) ZnO/graphene placed in air for two weeks.

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/content/aip/journal/apl/102/5/10.1063/1.4790161
2013-02-04
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Homogeneous and stable p-type doping of graphene by MeV electron beam-stimulated hybridization with ZnO thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4790161
10.1063/1.4790161
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