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Tensile strained GeSn on Si by solid phase epitaxy
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10.1063/1.4790302
/content/aip/journal/apl/102/5/10.1063/1.4790302
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4790302

Figures

Image of FIG. 1.
FIG. 1.

Comparison of XRD ω/2θ scans of as-deposited (black, solid line with squares) and crystallized (red, solid line) GeSn on Si(111) for sample C (4.5% Sn/(Sn + Ge) flux ratio).

Image of FIG. 2.
FIG. 2.

Rutherford backscattering spectra for sample C (4.5% Sn/(Sn + Ge) flux ratio) in random (black, solid line with squares) and channeling (green, dashed line) geometry for the as-deposited layer, and in channeling geometry after annealing (red, solid line).

Image of FIG. 3.
FIG. 3.

Transmission electron microscopy imaging of the as-deposited, amorphous GeSn (left) and crystalline GeSn (right) after annealing (sample C with 4.5% Sn/(Sn + Ge) flux ratio).

Image of FIG. 4.
FIG. 4.

XRD reciprocal space map around the (331) reflection of 37 nm crystallized GeSn (sample C with 4.5% Sn/(Sn + Ge) flux ratio), transformed to in-plane and out-of-plane lattice spacings. The colorbar indicates the XRD intensity (arbitrary units) in log scale.

Image of FIG. 5.
FIG. 5.

Absorption coefficient of GeSn with 4.5% Sn (sample C; red, solid line) and Ge (sample A; black, dashed line) formed by solid phase epitaxy on silicon, measured by spectroscopic ellipsometry.

Tables

Generic image for table
Table I.

Sample information of crystallized Ge1−xSnx layers on Si. Samples A till E have a thickness of 37 nm. Sample E has a thickness of 300 nm.

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/content/aip/journal/apl/102/5/10.1063/1.4790302
2013-02-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tensile strained GeSn on Si by solid phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4790302
10.1063/1.4790302
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