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Tensile strained GeSn on Si by solid phase epitaxy
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Image of FIG. 1.
FIG. 1.

Comparison of XRD ω/2θ scans of as-deposited (black, solid line with squares) and crystallized (red, solid line) GeSn on Si(111) for sample C (4.5% Sn/(Sn + Ge) flux ratio).

Image of FIG. 2.
FIG. 2.

Rutherford backscattering spectra for sample C (4.5% Sn/(Sn + Ge) flux ratio) in random (black, solid line with squares) and channeling (green, dashed line) geometry for the as-deposited layer, and in channeling geometry after annealing (red, solid line).

Image of FIG. 3.
FIG. 3.

Transmission electron microscopy imaging of the as-deposited, amorphous GeSn (left) and crystalline GeSn (right) after annealing (sample C with 4.5% Sn/(Sn + Ge) flux ratio).

Image of FIG. 4.
FIG. 4.

XRD reciprocal space map around the (331) reflection of 37 nm crystallized GeSn (sample C with 4.5% Sn/(Sn + Ge) flux ratio), transformed to in-plane and out-of-plane lattice spacings. The colorbar indicates the XRD intensity (arbitrary units) in log scale.

Image of FIG. 5.
FIG. 5.

Absorption coefficient of GeSn with 4.5% Sn (sample C; red, solid line) and Ge (sample A; black, dashed line) formed by solid phase epitaxy on silicon, measured by spectroscopic ellipsometry.


Generic image for table
Table I.

Sample information of crystallized Ge1−xSnx layers on Si. Samples A till E have a thickness of 37 nm. Sample E has a thickness of 300 nm.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tensile strained GeSn on Si by solid phase epitaxy