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(a) I-V curves resulting from a 50-nm-thick a-IGZO-based semiconducting layer with Ti contacts as a function of different Ti pad spacing (10,15, 20, 25, 30, 35, and 40 μm), calculated by circular transmission length method. A 50-nm-thick a-IGZO-based semiconducting layer was prepared through an identical TFT process. (b) Cross sectional illustration of a-IGZO TFT with bottom gate and top contact structure.
Core O1s, Ti2p, and Ag3d level spectra obtained from (a) Ti/a-IGZO and (b) Ag/a-IGZO interfaces from the TFT devices. (c) Cross sectional HRTEM image of a-IGZO TFT with Ti S/D electrode showing thin interfacial TiOx layer.
Transfer characteristics of a-IGZO-based thin film transistors with evaporation-deposited (a) Ag and (d) Ti S/D electrodes. Saturation mobility (μSAT ) values were obtained at VDS of 10.1 V. (c) E 00 and kT as functions of doping density of a-IGZO semiconducting layer.
Total ON resistance (RT) plotted with respect to a-IGZO TFT channel length for different VGS with (a) reference Ag and (c) Ti S/D electrodes in TFTs (symbol: measured data, lines: fitted lines). Evolution of effective channel length (LT), effective contact resistivity (rCeff), and S/D series resistances (RS/D) as functions of VGS for a-IGZO TFTs with (b) Ag and (d) Ti S/D electrodes.
Comparative table of device performance for amorphous IGZO TFTs with Ag (4.72 × 10−6 Ω cm) and Ti (1.66 × 10−4 Ω cm) source/drain electrodes including saturation mobility (μSAT ), SS, off current value (Ioff), on current value (Ion), and on-to-off current ratio (Ion/off), respectively.
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