1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
f
Microstructural defects in GaN thin films grown on chemically vapor-deposited graphene layers
Rent:
Rent this article for
Access full text Article
/content/aip/journal/apl/102/5/10.1063/1.4790385
1.
1. Y.-J. Kim, J.-H. Lee, and G.-C. Yi, Appl. Phys. Lett. 95, 213101 (2009).
http://dx.doi.org/10.1063/1.3266836
2.
2. J. A. Lin, M. Penchev, G. P. Wang, R. K. Paul, J. B. Zhong, X. Y. Jing, M. Ozkan, and C. S. Ozkan, Small 6, 2448 (2010).
http://dx.doi.org/10.1002/smll.201000250
3.
3. K. Chung, C.-H. Lee, and G.-C. Yi, Science 330, 655 (2010).
http://dx.doi.org/10.1126/science.1195403
4.
4. J. M. Lee, J. W. Choung, J. Yi, D. H. Lee, M. Samal, D. K. Yi, C.-H. Lee, G.-C. Yi, U. Paik, J. A. Rogers, and W. I. Park, Nano Lett. 10, 2783 (2010).
http://dx.doi.org/10.1021/nl100648y
5.
5. C.-H. Lee, Y.-J. Kim, Y. J. Hong, S.-R. Jeon, S. Bae, B. H. Hong, and G.-C. Yi, Adv. Mater. 23, 4614 (2011).
http://dx.doi.org/10.1002/adma.201102407
6.
6. H. Yoo, K. Chung, Y. S. Choi, C. S. Kang, K. H. Oh, M. Kim, and G.-C. Yi, Adv. Mater. 24, 515 (2012).
http://dx.doi.org/10.1002/adma.201103829
7.
7. K. Chung, S. I. Park, H. Baek, J. S. Chung, and G.-C. Yi, NPG Asia Mater. 4, e24 (2012).
http://dx.doi.org/10.1038/am.2012.45
8.
8. B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 68, 643 (1996).
http://dx.doi.org/10.1063/1.116495
9.
9. N. G. Weimann, L. F. Eastman, D. Doppalapudi, H. M. Ng, and T. D. Moustakas, J. Appl. Phys. 83, 3656 (1998).
http://dx.doi.org/10.1063/1.366585
10.
10. S. J. Rosner, E. C. Carr, M. J. Ludowise, G. Girolami, and H. I. Erikson, Appl. Phys. Lett. 70, 420 (1997).
http://dx.doi.org/10.1063/1.118322
11.
11. T. Sugahara, H. Sato, M. Hao, Y. Naoi, S. Kurai, S. Tottori, K. Yamashita, K. Nishino, L. T. Romano, and S. Sakai, Jpn. J. Appl. Phys., Part 2 37, L398 (1998).
http://dx.doi.org/10.1143/JJAP.37.L398
12.
12. C. Sasaoka, H. Sunakawa, A. Kimura, M. Nido, A. Usui, and A. Sakai, J. Cryst. Growth 189–190, 61 (1998).
http://dx.doi.org/10.1016/S0022-0248(98)00169-9
13.
13. X. S. Li, W. W. Cai, J. H. An, S. Kim, J. Nah, D. X. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, and R. S. Ruoff, Science 324, 1312 (2009).
http://dx.doi.org/10.1126/science.1171245
14.
14. M. P. Levendorf, C. S. Ruiz-Vargas, S. Garg, and J. Park, Nano Lett. 9, 4479 (2009).
http://dx.doi.org/10.1021/nl902790r
15.
15. S. Bae, H. Kim, Y. Lee, X. F. Xu, J. S. Park, Y. Zheng, J. Balakrishnan, T. Lei, H. R. Kim, Y. I. Song, Y. J. Kim, K. S. Kim, B. Ozyilmaz, J. H. Ahn, B. H. Hong, and S. Iijima, Nat. Nanotechnol. 5, 574 (2010).
http://dx.doi.org/10.1038/nnano.2010.132
16.
16. D. A. Porter and K. E. Easterling, Phase Transformations in Metals and Alloys (CRC, Florida, 2004), pp. 116142.
17.
17. D. M. Follstaedt, N. A. Missert, D. D. Koleske, C. C. Mitchell, and K. C. Cross, Appl. Phys. Lett. 83, 4797 (2003).
http://dx.doi.org/10.1063/1.1632540
18.
18. S. Amelinckx, Dislocations in Solids, edited by R. R. N. Nabarro (Elsevier, Amsterdam, 1982), Chap. 6, pp. 167186.
19.
19. P. Hirsch, A. Howie. R. Nicholson, D. W. Pashley, and M. J. Whelan, Electron Microscopy of Thin Crystals (Krieger, New York, 1977), pp. 156194.
20.
20. X. J. Ning, F. R. Chien, P. Pirouz, J. W. Yang, and M. A. Khan, J. Mater. Res. 11, 580 (1996).
http://dx.doi.org/10.1557/JMR.1996.0071
21.
21. A. Sakai, H. Sunakawa, and A. Usui, Appl. Phys. Lett. 73, 481 (1998).
http://dx.doi.org/10.1063/1.121907
22.
22. P. Vennegues, B. Beaumont, V. Bousquet, M. Vaille, and P. Gibart, J. Appl. Phys. 87, 4175 (2000).
http://dx.doi.org/10.1063/1.373048
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4790385
Loading
/content/aip/journal/apl/102/5/10.1063/1.4790385
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/102/5/10.1063/1.4790385
2013-02-05
2014-08-20

Abstract

Microstructural defects in GaN thin films grown on graphene produced via chemical vapor deposition have been investigated using electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM). EBSD analysis reveals the preferred orientations of the GaN films. We further examined the microstructural defects such as grain boundaries and threading dislocations present in the films using TEM. Plan-view TEM analysis showed presence of both high- and low-angle grain boundaries and the threading dislocations mostly bound to those grain boundaries. Moreover, the characteristics and behavior of the threading dislocations were also investigated using cross-section TEM analysis.

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/102/5/1.4790385.html;jsessionid=2haf7eedt64hq.x-aip-live-06?itemId=/content/aip/journal/apl/102/5/10.1063/1.4790385&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Microstructural defects in GaN thin films grown on chemically vapor-deposited graphene layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4790385
10.1063/1.4790385
SEARCH_EXPAND_ITEM