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Microstructural defects in GaN thin films grown on chemically vapor-deposited graphene layers
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Figures

Image of FIG. 1.

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FIG. 1.

SEM image and EBSD mapping images of GaN thin films. (a) 70° tilted-view SEM image of the GaN thin films for EBSD analysis. EBSD inverse pole figure maps in (b) the normal direction and (c) the transverse direction. (d) EBSD grain boundary misorientation angle mapping image (red > 1°, blue >3°). Grain boundaries with misorientation angles less than 3° are defined as low-angle grain boundaries, while those with misorientation angles greater than 3° are defined as high-angle grain boundaries.

Image of FIG. 2.

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FIG. 2.

Plan-view TEM images. (a) Bright-field image of the GaN thin films. The arrows indicate the location of the high-angle grain boundaries, and the inset represents the corresponding SAED pattern. High-resolution images of the GaN thin films in the region near (b) the low-angle grain boundary and (c)the high-angle grain boundary. The insets in (b) and (c) represent the corresponding fast Fourier transforms.

Image of FIG. 3.

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FIG. 3.

Plan-view two-beam DF image of the GaN thin films with g =  . The two-beam DF image obtained in this condition shows threading dislocations and grain boundaries.

Image of FIG. 4.

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FIG. 4.

Cross-section TEM images of the GaN thin films. (a) g =  and (b)–(d) g =  two-beam DF images taken from the same region of the GaN thin films. The bars colored white and black are located on top of the individual grains to indicate the locations of those grains.

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/content/aip/journal/apl/102/5/10.1063/1.4790385
2013-02-05
2014-04-17

Abstract

Microstructural defects in GaN thin films grown on graphene produced via chemical vapor deposition have been investigated using electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM). EBSD analysis reveals the preferred orientations of the GaN films. We further examined the microstructural defects such as grain boundaries and threading dislocations present in the films using TEM. Plan-view TEM analysis showed presence of both high- and low-angle grain boundaries and the threading dislocations mostly bound to those grain boundaries. Moreover, the characteristics and behavior of the threading dislocations were also investigated using cross-section TEM analysis.

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Scitation: Microstructural defects in GaN thin films grown on chemically vapor-deposited graphene layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4790385
10.1063/1.4790385
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