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Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1−x/InP (001)
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10.1063/1.4790605
/content/aip/journal/apl/102/5/10.1063/1.4790605
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4790605

Figures

Image of FIG. 1.
FIG. 1.

Comparison of the experimental (open circles) room temperature infrared reflectance spectra of gas-source MBE grown InAs1−xNx/InP (100) samples with the theoretical results (full lines) using theparameter values of Table I : (a) x = 0.002, (b) x = 0.022, (c) x = 0.024, and (d) x = 0.03.

Image of FIG. 2.
FIG. 2.

Comparison of the experimental (open circles and squares) InN-like, (filled circles and squares) InAs-like optical phonon frequencies with the calculated values (full lines) as a function of composition x of the gas-source MBE grown InAs1−xNx/InP (100).

Image of FIG. 3.
FIG. 3.

Comparison of the experimental (open circle, filled circle, open triangle, and filled triangle) and the calculated F2 localized vibrational modes (full lines) as a function of nearest neighbor force constant change parameter u of various light defects occupying As site in InAs.

Tables

Generic image for table
Table I.

Optical parameters used in simulating the infrared reflectivity spectra of InAs1−xNx/InP (100).

Generic image for table
Table II.

Comparison of the calculated triply degenerate F 2 LVMs with the experimental data Refs. 14–16 for different isolated light defects (Td symmetry) occupying the As site in InAs.

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/content/aip/journal/apl/102/5/10.1063/1.4790605
2013-02-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1−x/InP (001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4790605
10.1063/1.4790605
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