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Integrated high-quality factor silicon-on-sapphire ring resonators for the mid-infrared
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10.1063/1.4791558
/content/aip/journal/apl/102/5/10.1063/1.4791558
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4791558
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Optical image of a representative device, consisting of a ring resonator (bottom inset) coupled to a waveguide with a grating coupler (top inset) on input end and horn-coupler on the output end.

Image of FIG. 2.
FIG. 2.

Schematic of experimental setup used to characterize our devices in transmission.

Image of FIG. 3.
FIG. 3.

(a) Transmission measurement of device with coupling gap d = 300 nm, as fabricated. Ring resonances are highlighted with green to distinguish them from gas absorption dips (from atmospheric C13O2). (b) Device with d = 300 nm, after Piranha etch/HF cycling (Note: (a) and (b) are on same sample, but are not the same device.) Power transfer between the waveguide and the ring is greatly improved, and maximum loaded Q-factors have increased from 45 000 to 94 000, with a maximum intrinsic Q-factor of 127 000, shown in the inset.

Image of FIG. 4.
FIG. 4.

Transmission measurement of device with d = 300 nm, fabricated using resist reflow and post-fabrication Piranha-HF cycling. The reflow results in higher Q-factors, with a maximum loaded Qt of 151 000 and intrinsic Q0 of 278 000, as shown in the inset.

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/content/aip/journal/apl/102/5/10.1063/1.4791558
2013-02-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Integrated high-quality factor silicon-on-sapphire ring resonators for the mid-infrared
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4791558
10.1063/1.4791558
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