1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Programmable ZnO nanowire transistors using switchable polarization of ferroelectric liquid crystal
Rent:
Rent this article for
USD
10.1063/1.4791561
/content/aip/journal/apl/102/5/10.1063/1.4791561
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4791561
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Output characteristics (IDS-VDS) and (b) transfer characteristics (IDS-VG) of a back-gated ZnO nanowire FET without an FLC layer. The inset shows an optical image of the ZnO nanowire FET with a back-gate configuration.

Image of FIG. 2.
FIG. 2.

(a) A schematic view of a back-gated ZnO nanowire FET with an FLC layer. (b) Output characteristics (IDS-VDS) of the FLC-coated ZnO nanowire FET. (c) Hysteretic behaviors of the FLC-coated ZnO nanowire FET (at VDS = 0.1, 0.2, and 1 V). (d) Hysteretic behaviors of the FLC-coated ZnO nanowire FET as a function of the sweep range of gate voltages. Arrows in (c) and (d) indicate gate voltage sweep directions.

Image of FIG. 3.
FIG. 3.

(a) Hysteretic behavior of a top-gated ZnO nanowire FET with an FLC layer. The insets show a schematic illustration of positive or negative polarization of an FLC layer induced on a ZnO nanowire depending on gate voltage sweep directions. (b) Reversible, reproducible ON and OFF switching characteristics of a top-gated nanowire device with an FLC layer. (c) Schematic illustrations of a FLC-coated ZnO nanowire FET exhibiting ON and OFF states.

Image of FIG. 4.
FIG. 4.

(a) Retention characteristics of the ON and OFF states of a FLC-coated ZnO nanowire FET with a top-gate configuration after the application of a writing pulse (+15 V) and an erasing pulse (−15 V). (b) Schematic diagrams for charge accumulation and depletion in the nanowire channel, corresponding to the ON state and the OFF state, respectively.

Loading

Article metrics loading...

/content/aip/journal/apl/102/5/10.1063/1.4791561
2013-02-06
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Programmable ZnO nanowire transistors using switchable polarization of ferroelectric liquid crystal
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4791561
10.1063/1.4791561
SEARCH_EXPAND_ITEM