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PL spectra of all electronic states inside the hybrid QD-QW structure (red) and QD states only (blue) where top QW was etched off. Dashed lines show fitting of GS and 1ES QD states of the etched sample without the top QW. The TRPL image (inset) shows radiative recombination dynamics of the QW.
Transmission of the hybrid QD-QW system in both gain and absorption regime as a function of bias applied. Below −6 V reverse voltage clear QCSE redshift of the InGaAs QW becomes visible (magenta–blue) leading up to 9 dB of extinction ratio at studied wavelength of 1070 nm (inset).
Dynamics of absorption shows continuous shortening of QD 1ES recovery caused by bias dependent tunelling (brown–magenta). As RB increases, the QW overlaps the studied region of 1070 nm and mixture of QW–QD dynamics becomes visible (magenta - black). The inset shows double-exponential fitting of the QD GS dynamics between 0 and −6 V.
(a) V-I-L curves (blue, red) of hybrid QD-QW laser for the cavity length of 1.1 mm under CW condition. Green and orange curves show device impedance and wall-plug efficiency, respectively. (b) Optical spectra at 150 mA with Fabry-Perot mode distance of 148 pm (inset).
Full laser structure with target dimensions and doping description.
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