1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots
Rent:
Rent this article for
USD
10.1063/1.4791678
/content/aip/journal/apl/102/5/10.1063/1.4791678
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4791678
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM measurements of uncapped GaSb/GaAs QD ensembles corresponding to growth parameters identical to samples (a) A, (b) B, and (c) C. The sizes are given in the table.

Image of FIG. 2.
FIG. 2.

Charge-selective DLTS measurements with a reference time constant of and different measurement voltages Vm . (a) Sample A: GaSb/GaAs QDs in GaAs pn-diode. (b) Sample B: GaSb/GaAs QDs in GaAs pn-diode. (c) Sample C: GaSb/GaAs QDs with two additional Al0.3Ga0.7As barriers.

Image of FIG. 3.
FIG. 3.

Activation energies Ea and apparent capture cross sections forholes for each individual measurement bias Vm . (a) and (b) Sample A. (c)and (d) Sample B. (d) and (f) Sample C.

Image of FIG. 4.
FIG. 4.

Hole storage time in quantum dots as a function of the localization energy Eloc for different values of the apparent hole capture cross section . 10 yr of storage time is required for non-volatility. The other values can be found in Refs. 12, 24, 26, and 27 .

Loading

Article metrics loading...

/content/aip/journal/apl/102/5/10.1063/1.4791678
2013-02-07
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/5/10.1063/1.4791678
10.1063/1.4791678
SEARCH_EXPAND_ITEM