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AFM measurements of uncapped GaSb/GaAs QD ensembles corresponding to growth parameters identical to samples (a) A, (b) B, and (c) C. The sizes are given in the table.
Charge-selective DLTS measurements with a reference time constant of and different measurement voltages Vm . (a) Sample A: GaSb/GaAs QDs in GaAs pn-diode. (b) Sample B: GaSb/GaAs QDs in GaAs pn-diode. (c) Sample C: GaSb/GaAs QDs with two additional Al0.3Ga0.7As barriers.
Activation energies Ea and apparent capture cross sections forholes for each individual measurement bias Vm . (a) and (b) Sample A. (c)and (d) Sample B. (d) and (f) Sample C.
Hole storage time in quantum dots as a function of the localization energy Eloc for different values of the apparent hole capture cross section . 10 yr of storage time is required for non-volatility. The other values can be found in Refs. 12, 24, 26, and 27 .
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