1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes
Rent:
Rent this article for
USD
10.1063/1.4789997
/content/aip/journal/apl/102/6/10.1063/1.4789997
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/6/10.1063/1.4789997

Figures

Image of FIG. 1.
FIG. 1.

The device structure (bottom gate and bottom contact). IGZO layers for different purposes are also marked.

Image of FIG. 2.
FIG. 2.

ID–VG transfer curves of samples A, B, and C.

Image of FIG. 3.
FIG. 3.

ID−VD output characteristics of sample B and C as a function of gate voltage.

Image of FIG. 4.
FIG. 4.

Left: transmission spectra of IGZO thin films with and without RTA treatment (400 °C, 60 s). Right: carrier concentration, sheet resistance, and Hall mobility of IGZO film as a function of RTA treatment (400 °C) time.

Image of FIG. 5.
FIG. 5.

O 1s XPS narrow scan spectra on the IGZO thin film surface with sample A (without any treatment) and sample C (with RTA treatment) and its bonding states analysis.

Tables

Generic image for table
Table I.

Comparison of the various electrical parameters of our IGZO-TFTs with those of the reported IGZO-TFTs with various metal electrodes.

Loading

Article metrics loading...

/content/aip/journal/apl/102/6/10.1063/1.4789997
2013-02-11
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High performance InGaZnO thin film transistor with InGaZnO source and drain electrodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/6/10.1063/1.4789997
10.1063/1.4789997
SEARCH_EXPAND_ITEM