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The device structure (bottom gate and bottom contact). IGZO layers for different purposes are also marked.
ID–VG transfer curves of samples A, B, and C.
ID−VD output characteristics of sample B and C as a function of gate voltage.
Left: transmission spectra of IGZO thin films with and without RTA treatment (400 °C, 60 s). Right: carrier concentration, sheet resistance, and Hall mobility of IGZO film as a function of RTA treatment (400 °C) time.
O 1s XPS narrow scan spectra on the IGZO thin film surface with sample A (without any treatment) and sample C (with RTA treatment) and its bonding states analysis.
Comparison of the various electrical parameters of our IGZO-TFTs with those of the reported IGZO-TFTs with various metal electrodes.
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