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Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films
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10.1063/1.4790842
/content/aip/journal/apl/102/6/10.1063/1.4790842
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/6/10.1063/1.4790842
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) A triangular-waveform voltage signal V(t) with a fixed amplitude of 60 V and period tp . Inset shows a schematic of the Pt/VO2/Al2O3 sample geometry and electrical measurement setup. (b) The resulting current I(t), restricted by the current flow of the load resistor. We defined the switching voltages V ON and V OFF as V(t) at the time when I(t) abruptly increased and decreased, respectively. (c) Procedure for formation of a channel on the surface of the VO2 thin film; the channel has different optical properties than its surroundings.

Image of FIG. 2.
FIG. 2.

Dependence of V ON and V OFF on (a) the period of the triangular-waveform voltage signal, tp , (b) the environmental temperature, Te , and (c) the resistance of the load resistor, R load.

Image of FIG. 3.
FIG. 3.

Numerical simulation based on the mechanism of thermally induced phase transition. (a) Triangular-waveform voltage signal V(t) and (b) resulting current I(t). Insets show three-dimensional lattice of Pt/VO2/Al2O3 sample and switching rules for the state of the VO2 cell, which we considered for numerical simulation. (c) Procedure for the formation of a metallic channel and Tn -distribution on the surface of the thin film.

Image of FIG. 4.
FIG. 4.

Numerical simulation based on the mechanism of thermally induced phase transition. Dependence of V ON and V OFF on (a) tp , (b) Te , and (c) R load.

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/content/aip/journal/apl/102/6/10.1063/1.4790842
2013-02-11
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Origin of variation in switching voltages in threshold-switching phenomena of VO2 thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/6/10.1063/1.4790842
10.1063/1.4790842
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