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Lanthanide impurities in wide bandgap semiconductors: A possible roadmap for spintronic devices
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View: Figures


Image of FIG. 1.
FIG. 1.

Results of our calculations (closed symbols) of RE impurities in (a) GaN and (b) ZnO compared to the ones predicted from a phenomenological model (open symbols). 25,27 The figure presents the highest occupied (circles) and lowest unoccupied (triangles) 4f-related energy eigenvalues ( ), in the respective valence and conduction bands (gray regions), considering the Hubbard potential corrections. All experimental and theoretical values are presented with respect to the GaN and ZnO valence band tops, taken as reference values. The (c) panel presents the U4f values, obtained self-consistently, for 4f-related states of each impurity in GaN (open diamond symbols) and ZnO (closed diamond symbols).

Image of FIG. 2.
FIG. 2.

The s, p, d, and f projected density of states (PDOS) inside the (a) Eu and (b) Gd atomic spheres ( ) for spin up and spin down energy levels in ZnO. The dashed lines represent the valence band top ( ) and the conduction band bottom (at the Fermi energy ).

Image of FIG. 3.
FIG. 3.

Electron density in the plane for the electron in the conduction band bottom (Fermi energy level) for (a) Eu and (b) Gd in ZnO. The coloring goes from red (high density) to violet (low density), following the rainbow sequence.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lanthanide impurities in wide bandgap semiconductors: A possible roadmap for spintronic devices