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SEM images taken from samples A, B, and C, viewed from the top [(a), (c), and (e)] and from the side [(b), (d), and (f)].
(a) Cross-sectional TEM image taken from sample A; (b) 〈110〉 cross-sectional high-resolution TEM image taken from a typical Au nanoparticle from sample A; (c) and (d) Cross-sectional TEM image and 〈110〉 cross-sectional high-resolution TEM image of a typical Au nanoparticle, both taken from sample B. Insets in (b) and (d) showing electron diffraction patterns of zinc-blende structure; (e) 〈110〉 cross-sectional high-resolution TEM image taken from sample C and (f) being a FFT taken at the nanowire/base interface.
(a) Schematic illustration of a three-dimensional model of the observed faceted triangular pyramid base; (b) 〈110〉 projected model.
Schematic diagram of how a spontaneously formed Au nanoparticle affects the formation of epitaxially grown GaAs during annealing (Ga source absent) and GaAs growth (with Ga source).
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