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Influence of structural anisotropy to anisotropic electron mobility in a-plane InN
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Image of FIG. 1.
FIG. 1.

(a) Top-view SEM image of a nonpolar (a-plane) InN film, grown on r-plane sapphire substrates by nitrogen-plasma-assisted molecule beam epitaxy. (b) ω-2θ XRD rocking curves of the a-plane InN peak taken with an open detector parallel and perpendicular to the in-plane c-axis showing significant anisotropy. (c) and (d) Cross-sectional bright-field and dark-field TEM images for the zone axis from an a-plane InN film, respectively. Inset: Scheme of electron transport along and through the SFs. Since electrons cannot detour around the long channel of SFs, electrons transporting parallel to the in-plane c-axis can be quickly scattered or trapped by the defects.

Image of FIG. 2.
FIG. 2.

Terahertz transmittance of a nonpolar InN film measured for the linear polarization states parallel (solid circles) and perpendicular (open circles) to the in-plane c-axis.

Image of FIG. 3.
FIG. 3.

In-plane polarization dependence of the complex refractive index and electrical conductivity of the nonpolar InN film, extracted from the terahertz transmittance curve in Fig. 2 . Solid lines in (b) and (d) are obtained by the simple Drude model with the parameters listed in Table I .


Generic image for table
Table I.

Extracted parameters for best fits in Fig. 3 compared to those obtained from Hall effect measurements.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of structural anisotropy to anisotropic electron mobility in a-plane InN