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(a) Top-view SEM image of a nonpolar (a-plane) InN film, grown on r-plane sapphire substrates by nitrogen-plasma-assisted molecule beam epitaxy. (b) ω-2θ XRD rocking curves of the a-plane InN peak taken with an open detector parallel and perpendicular to the in-plane c-axis showing significant anisotropy. (c) and (d) Cross-sectional bright-field and dark-field TEM images for the zone axis from an a-plane InN film, respectively. Inset: Scheme of electron transport along and through the SFs. Since electrons cannot detour around the long channel of SFs, electrons transporting parallel to the in-plane c-axis can be quickly scattered or trapped by the defects.
Terahertz transmittance of a nonpolar InN film measured for the linear polarization states parallel (solid circles) and perpendicular (open circles) to the in-plane c-axis.
Extracted parameters for best fits in Fig. 3 compared to those obtained from Hall effect measurements.
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