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Electronic and interface properties of polyfluorene films on GaN for hybrid optoelectronic applications
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Figures

Image of FIG. 1.

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FIG. 1.

UPS spectra of: GaN control (top) and PFO/GaN (bottom) samples. In magnification, the low energy part of the spectrum where the valence band edge is obtained from (right) and the high binding energy cutoff where the work function is obtained from (left), are shown.

Image of FIG. 2.

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FIG. 2.

Energy level diagram of the PFO/GaN interface obtained by UPS studies of pristine GaN and PFO/GaN samples.

Image of FIG. 3.

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FIG. 3.

PL (right) and PLE (left) spectra of 15 nm PFO films on GaN and Al2O3 (top). Normalized PL decays monitoring the 0-0 peak of PFO of the aforementioned samples in a logarithmic scale (bottom). The instrument response is also displayed.

Image of FIG. 4.

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FIG. 4.

Variable angle ellipsometry of a 15 nm PFO spin-coated on glass: Example of the fitted model to experimental data for incidence angles of 60 and 70 degrees (top). Derived complex dielectric function of PFO, expressed as refractive index n and extinction coefficient k (bottom).

Image of FIG. 5.

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FIG. 5.

Normalized PL decays of PFO films of different thicknesses (10–55 nm) on GaN obtained at the 0-0 vibronic peak of PFO.

Image of FIG. 6.

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FIG. 6.

IVV * (red) and IVH * (blue) decays and emission anisotropy coefficient r(t) (green) for a 10 nm PFO film on GaN and r(t) for a thicker 25 nm film on GaN (orange) (top). Anisotropy coefficient at t = 0 of different thickness PFO films on GaN and Al2O3 (bottom).

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2013-02-13
2014-04-16

Abstract

Electronic and interface properties of spin-coated poly(9,9-dioctylfluorenyl-2,7-diyl) (PFO) films on GaN have been investigated in terms of their potential for optoelectronic applications. The PFO/GaN interface was studied by photoemission spectroscopy showing a type-II energy alignment with band offsets suitable for efficient photocurrent generation. The light harvesting potential is further supported by fluorescence experiments that show evidence of photo-induced electron transfer from PFO to GaN. The impact of polymer film thickness was probed using emission anisotropy and ellipsometry, indicating the presence of an ordered planar phase of PFO. The study has implications to hybrid optoelectronic devices employing the two important materials.

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Scitation: Electronic and interface properties of polyfluorene films on GaN for hybrid optoelectronic applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/6/10.1063/1.4792211
10.1063/1.4792211
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