Full text loading...
Temperature dependence of L for the AlGaN/GaN HEMT subjected to the highest dose of gamma-irradiation. Note: room temperature L values decreased from ∼1 μm before irradiation, to ∼0.35 μm after irradiation. Inset: Arrhenius plot of the same data yielding the activation energy, ΔEa , of 216 ± 10 meV. ΔEa represents carrier delocalization energy, which is related to carrier recombination.
Left: Experimental dependence of minority carrier diffusion length in AlGaN/GaN HEMT on irradiation dose. The diffusion length consistently decreases as the dose of radiation increases. Right: Dependence of calculated activation energy, ΔEa , on irradiation dose. Note: activation energy increase indicates creation of new deeper defects with the levels in the semiconductor forbidden gap as a result of gamma irradiation.
DC I–V characteristics of AlGaN/GaN HEMT before and after gamma irradiation with a dose of 700 Gy. (a) Transfer characteristics measured under VDS = +5 V. (b) Drain characteristics measured under the initial VG = 0 V (upper curve) with the increment of −1 V. (c) Gate characteristics under forward and reverse bias before and after irradiation.
Article metrics loading...