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Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors
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Image of FIG. 1.
FIG. 1.

Temperature dependence of L for the AlGaN/GaN HEMT subjected to the highest dose of gamma-irradiation. Note: room temperature L values decreased from ∼1 μm before irradiation, to ∼0.35 μm after irradiation. Inset: Arrhenius plot of the same data yielding the activation energy, ΔEa , of 216 ± 10 meV. ΔEa represents carrier delocalization energy, which is related to carrier recombination.

Image of FIG. 2.
FIG. 2.

Left: Experimental dependence of minority carrier diffusion length in AlGaN/GaN HEMT on irradiation dose. The diffusion length consistently decreases as the dose of radiation increases. Right: Dependence of calculated activation energy, ΔEa , on irradiation dose. Note: activation energy increase indicates creation of new deeper defects with the levels in the semiconductor forbidden gap as a result of gamma irradiation.

Image of FIG. 3.
FIG. 3.

DC I–V characteristics of AlGaN/GaN HEMT before and after gamma irradiation with a dose of 700 Gy. (a) Transfer characteristics measured under VDS = +5 V. (b) Drain characteristics measured under the initial VG = 0 V (upper curve) with the increment of −1 V. (c) Gate characteristics under forward and reverse bias before and after irradiation.


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Table I.

Impact of gamma irradiation on the figures of merit of AlGaN/GaN HEMTs. ΔIDS (%) was calculated from Fig. 3(b) at VDS = 5 V for the top I-V branches before and after irradiation. ΔGm (%) was calculated from Fig. 3(a) using the peak transconductance values before and after irradiation.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors