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Electro-refractive effect in Ge/SiGe multiple quantum wells
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10.1063/1.4792271
/content/aip/journal/apl/102/6/10.1063/1.4792271
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/6/10.1063/1.4792271
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of the device showing epitaxy steps, (b) optical microscope view of the device with the input fiber injecting light into the waveguide, (c)XRD (004) RSM, (d) XRD (224) RSM.

Image of FIG. 2.
FIG. 2.

Absorption spectra of the 64 μm Ge/SiGe waveguide obtained from optical transmission measurements for different electric fields as a function of wavelength. The current voltage characteristic of the device is reported in the inset

Image of FIG. 3.
FIG. 3.

Transmission spectra at 0 V (black spheres) and 8 V (orange triangles) bias for wavelengths between 1480 nm and 1490 nm.

Image of FIG. 4.
FIG. 4.

Measured quadratic electro-optic coefficient for Ge/SiGe MQW at 1475 nm, 1487 nm, 1502 nm, and 1517 nm. The inset shows the refractive index variation measured by the shift of FP fringes at different wavelenghts as a function of the electric field.

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/content/aip/journal/apl/102/6/10.1063/1.4792271
2013-02-11
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electro-refractive effect in Ge/SiGe multiple quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/6/10.1063/1.4792271
10.1063/1.4792271
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