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Rapid hot-electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures
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10.1063/1.4792276
/content/aip/journal/apl/102/6/10.1063/1.4792276
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/6/10.1063/1.4792276
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Figures

Image of FIG. 1.
FIG. 1.

Non-equilibrium phonon occupation numbers of the interface modes from energy relaxation of the hot electrons at 2000 K in a typical lattice-matched InAlN/AlN/GaN heterostructure with areal electron density of (corresponding to an effective channel width of 44 Å), calculated with a phonon life-time for (a) excluding and (b) including screening. In (b) the result with is also shown.

Image of FIG. 2.
FIG. 2.

Average power dissipated vs electron temperature for the three different cases: (i) excluding both screening and hot phonons, (ii) including only screening, (iii) including both screening and the HPE. Also shown arethe experimental data (squares) from a hot-electron noise measurement (Ref. 1 ). A single phonon life-time of 1 ps is used when including the HPE throughout the entire temperature range. Scrn stands for screening.

Image of FIG. 3.
FIG. 3.

(a) Energy relaxation times vs electron temperature calculated with for the three cases: (i) excluding both screening and hot phonons, (ii) including only screening, (iii) including both screening and the HPE. The results at low and high electron temperatures calculated, respectively, with and 0.1 ps for including both screening and the HPE are also shown. Scr stands for screening. (b) Reduction factors α, β, and vs electron temperature for together with reduction β at low and high electron temperatures for and 0.1 ps, respectively.

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/content/aip/journal/apl/102/6/10.1063/1.4792276
2013-02-12
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rapid hot-electron energy relaxation in lattice-matched InAlN/AlN/GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/6/10.1063/1.4792276
10.1063/1.4792276
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