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Highly tunable-emittance radiator based on semiconductor-metal transition of VO2 thin films
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10.1063/1.4792277
/content/aip/journal/apl/102/6/10.1063/1.4792277
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/6/10.1063/1.4792277
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Figures

Image of FIG. 1.
FIG. 1.

(a) Scanning electron microscope (SEM) cross section image and (b) XRD patterns of the VO2-based smart structure. (c) SEM cross section and (d) AFM images showing the granular morphology of 30 nm-thick RPL-deposited VO2 nanocrystalline active layer.

Image of FIG. 2.
FIG. 2.

Near normal spectral emittance at 25 °C (dashed black line) and 100 °C (solid red line) of the VO2-based smart structure.

Image of FIG. 3.
FIG. 3.

Temperature dependence of the total emittance ε of the VO2-based smart structure. The inset shows the analysis made using Gaussian fit of the derivative of the [ε = f(T)] curves for heating and cooling segments.

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/content/aip/journal/apl/102/6/10.1063/1.4792277
2013-02-12
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly tunable-emittance radiator based on semiconductor-metal transition of VO2 thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/102/6/10.1063/1.4792277
10.1063/1.4792277
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