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(a) Scanning electron microscope (SEM) cross section image and (b) XRD patterns of the VO2-based smart structure. (c) SEM cross section and (d) AFM images showing the granular morphology of 30 nm-thick RPL-deposited VO2 nanocrystalline active layer.
Near normal spectral emittance at 25 °C (dashed black line) and 100 °C (solid red line) of the VO2-based smart structure.
Temperature dependence of the total emittance ε of the VO2-based smart structure. The inset shows the analysis made using Gaussian fit of the derivative of the [ε = f(T)] curves for heating and cooling segments.
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